A semiconductor structure with multiple active regions and its preparation method

Abstract

A multi-active-region semiconductor structure and a preparation method thereof, the multi-active-region semiconductor structure comprising: a 2k-1 common confinement layer located between the kth active layer and the kth tunnel junction and in contact with the kth tunnel junction; The 2kth common confinement layer located between the k+1th active layer and the kth tunnel junction and in contact with the kth tunnel junction; the forbidden band width of the kth quantum well layer is smaller than the forbidden bandwidth of the kth first semiconductor layer Width and the bandgap width of the kth second semiconductor layer; the total thickness of the 2k-1 common confinement layer and the 2k common confinement layer is greater than the critical optical field coupling thickness and less than or equal to 2 times of the critical optical field coupling thickness; the second The thickness of the k quantum well layer is less than or equal to 1 / 10 of the 2k-1 common confinement layer, and the thickness of the k quantum well layer is less than or equal to 1 / 10 of the 2k common confinement layer. The luminous efficiency of the semiconductor structure with multiple active regions is effectively improved and the crosstalk of light field is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure with multiple active regions and a preparation method thereof. Background technique [0002] A light-emitting semiconductor device is a device that produces stimulated emission with a certain semiconductor material as a working substance. Its working principle is: through a certain excitation method, between the energy band (conduction band and valence band) of the semiconductor material, or Between the energy band of the material and the energy level of the impurity (acceptor or donor), the particle number inversion of the non-equilibrium carrier is realized. When a large number of electrons and holes in the particle number inversion state recombine, stimulated emission occurs Because of its small size and high electro-optical conversion efficiency, light-emitting semiconductor devices are widely used. [0003] At present, the existing technolog...

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Problems solved by technology

[0004] Therefore, the technical problem to be solved by the present invention is to overcome the problem of effectively improving luminous efficiency and reducing optical field crosstalk in the prior art, so as to provide a semiconductor structure with multiple active regions and its preparation method

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