Metal-insulator-metal capacitor structure and method of formation

A technology of metal capacitors and insulators, which is applied in capacitors, semiconductor devices, electric solid devices, etc., can solve the problems of breakdown voltage failure, breakdown, and MIM breakdown voltage drop, so as to avoid tip discharge and improve Capacitance value, the effect of increasing the breakdown voltage

Active Publication Date: 2022-04-05
GUANGZHOU CANSEMI TECH INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thinner the thickness of the dielectric layer, the greater the capacitance value of the corresponding MIM. On the other hand, when the dielectric layer is thinner at the same voltage, the roughness of the lower electrode surface has a greater impact on the upper electrode (MIM capacitor), and the more likely it is to occur The tip discharge breaks down the MIM capacitor, causing the breakdown voltage of the MIM to drop, that is, the existing MIM cannot better balance between a large capacitance value and a large breakdown voltage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal-insulator-metal capacitor structure and method of formation
  • Metal-insulator-metal capacitor structure and method of formation
  • Metal-insulator-metal capacitor structure and method of formation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the purpose, advantages and features of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in very simplified form and not drawn to scale, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In addition, the structures shown in the drawings are often a part of the actual structure. In particular, each drawing needs to display different emphases, and sometimes uses different scales.

[0026] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on, connected to the other element or layer, or intervening elements or layers may be present. layer. In contrast, when an element is referred to as being "directly on" or "directly connected to" a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a metal-insulator-metal capacitor structure, comprising a lower electrode, a dielectric layer, an interface layer and an upper electrode; the dielectric layer is formed on the lower electrode; the upper electrode is formed on the dielectric layer; the interface layer is formed on the dielectric layer and the upper electrode Between the electrodes, and / or, the interface layer is formed between the dielectric layer and the lower electrode; wherein, the lower electrode includes an interconnected metal layer and a metal barrier layer, the metal barrier layer is located between the interconnected metal layer and the dielectric layer, and the metal barrier The thickness of the layer is greater than 400 angstroms, the roughness of the interface layer is smaller than the roughness of the surface of the metal barrier layer facing the dielectric layer, and the dielectric constant of the interface layer is larger than that of the dielectric layer. In the present invention, by thickening the thickness of the metal barrier layer in the lower electrode, and adding an interface layer to cover the upper surface of the metal barrier layer and / or dielectric layer, the surface of the lower electrode is smoothed, thereby increasing its breakdown voltage, and The second dielectric constant is greater than the first dielectric constant to increase its capacitance value.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a metal-insulator-metal capacitor structure and a forming method. Background technique [0002] Capacitors are used in semiconductor integrated circuits as charge storage, coupling, and filter devices. Among them, the metal-insulator-metal capacitor structure (metal-insulator-metal, MIM) has a small parasitic resistance and can be formed directly using the interconnection layer of the device. Therefore, the MIM capacitor structure is widely used in analog circuits and radio frequency circuits. Specifically, in different application scenarios, there are different requirements for the MIM. For example, in high-frequency radio frequency circuits, MIM is required to have a large capacitance to reduce capacitive reactance; in low-frequency analog circuits, MIM is used as a charge pump to store charges, and it needs to have a higher breakdown voltage, that is, for MIM The time...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L21/768H01L49/02
CPCH01L23/5223H01L21/76841H01L28/75
Inventor 张志敏陈献龙
Owner GUANGZHOU CANSEMI TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products