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A super junction MOS with a split gate structure and a preparation method thereof

A split gate and super junction technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large Qg and slow switching speed, and achieve the effect of fast switching speed and low switching loss

Pending Publication Date: 2022-02-18
厦门芯达茂微电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem that the Qg of Super Junction MOS currently on the market is relatively large, resulting in slow switching speed, the present invention proposes a super junction MOS with a split gate structure and a preparation method thereof, wherein the split gate structure has a The super junction MOS, including the cell area, the cell area is equipped with a Split Gate structure and a SuperJunction structure

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  • A super junction MOS with a split gate structure and a preparation method thereof
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  • A super junction MOS with a split gate structure and a preparation method thereof

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Embodiment Construction

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0039] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional rela...

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Abstract

The invention provides a super junction MOS with a split gate structure and a preparation method thereof; the super junction MOS with the split gate structure comprises a cell region, and the cell region is provided with a Split Gate structure and a Super Junction structure. According to the super junction MOS with the split gate structure provided by the invention, through the structural design of combining the Split Gate and the Super Junction, the whole super junction MOS can have the advantages of the Split Gate and the Super Junction at the same time, the Qg and Rds (on) of the MOS can be effectively reduced, and the problem that the switching speed is slow due to the fact that the Qg of the existing Super Junction MOS is large is solved, so that the switching speed is increased, and the switching loss is reduced.

Description

technical field [0001] The invention relates to the field of power devices, in particular to a super junction MOS with a split gate structure and a preparation method thereof. Background technique [0002] In the field of power devices, power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor, also known as Metal-Oxide-Semiconductor Field-Effect Transistors) are widely used in switching device structures. [0003] As we all know, power devices have two major characteristics. One is that when the device is in the on state, it has low on-resistance, which minimizes its own power loss; the other is that when the device is in the off state, it can have a sufficiently high reverse breakdown. Voltage. Super Junction MOS is a MOS designed on the basis of VDMOS (acoustic effect power transistor), which uses a new super-junction structure, that is, super-junction MOS, which solves the problem of R ds The contradictory relationship between (on) (on-state resistance) and BV (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L21/336
CPCH01L29/0634H01L29/4236H01L29/7831H01L29/7827H01L29/66484
Inventor 徐守一赖银坤蔡铭进
Owner 厦门芯达茂微电子有限公司