Transistor device, forming method thereof and DRAM

A transistor and device technology, applied in the semiconductor field, can solve the problems of insufficient transistor distance, current leakage, short-channel effect of transistors, etc., and achieve the effects of reducing current leakage, improving refresh, and increasing spacing distance

Pending Publication Date: 2022-02-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the further shrinking of integrated circuit technology, the distance between the source and drain of existing transistors is still insufficient, and there are still technical problems of short channel effect and current leakage in transistors. Therefore, it is necessary to provide a method that can more effectively improve the short circuit Channel Effect Transistor Manufacturing Technology

Method used

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  • Transistor device, forming method thereof and DRAM
  • Transistor device, forming method thereof and DRAM
  • Transistor device, forming method thereof and DRAM

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Embodiment Construction

[0037] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0038] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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PUM

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Abstract

The invention relates to a transistor device, a forming method thereof and a DRAM (dynamic random access memory), and belongs to the technical field of semiconductors, thereby solving problems of short channel effect and current leakage caused by size reduction of a transistor in the prior art. The transistor device includes: a semiconductor substrate, a gate trench arranged in the semiconductor substrate, comprising an upper part and a lower part having the cross section being rhombic, a gate dielectric layer arranged on the inner wall of the gate trench, a gate conductor layer arranged at the lower part, and an isolation layer arranged on the upper portion; and the isolation layer and the gate conductor layer are located on the inner wall of the gate dielectric layer. The short channel effect is improved; and the current leakage is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transistor device, its forming method and DRAM. Background technique [0002] Memory is a device or component used to store a large amount of information in a digital system, and is an important part of computers and digital devices. Memory can be divided into two categories: Random Access Memory (RAM) and Read Only Memory (ROM). RAM includes DRAM, PRAM, MRAM, etc., and transistors are one of the key components for manufacturing these RAMs. The gate of the transistor is used to control the current flow between the source and drain. Ideally, when a suitable voltage is applied to the gate, a current is generated between the source and the drain; otherwise, when the gate voltage is not applied, the current between the source and the drain is turned off. [0003] However, as the integration level of RAM continues to increase, the size of transistors continues to decrease....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423H01L21/336H01L27/108
CPCH01L29/78H01L29/4236H01L29/66477H10B12/30
Inventor 郭炳容卢一泓李俊杰高建峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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