Plasma processing device and gas supply method

Abstract

The invention discloses a plasma processing device and a gas supply method, the plasma processing device comprises a reaction cavity, a base is arranged in the reaction cavity, a gas supply device conveys reaction gas into the reaction cavity, and the gas supply device comprises a gas main pipeline and a plurality of gas shunting conveying pipelines; a flow control valve is arranged on each of the multiple gas shunting conveying pipelines, and the corresponding relation between the flow coefficients of the multiple flow control valves and the electric signals is stored in a controller; and the proportional relation of the target gas flow of the multiple gas flow dividing conveying pipelines is set, and the controller conveys corresponding electric signals to the flow control valves according to the flow proportion of the multiple gas flow dividing conveying pipelines so as to adjust the valve opening degree of each flow control valve. According to the invention, one-to-two-path, one-to-three-path or even one-to-more-path division can be realized, accurate division can still be realized when a flow feedback module is not arranged, less time is consumed, the response speed is high, a control result is basically not influenced by differences of all valves, and the practicability is high.

Description

technical field [0001] The invention relates to the field of semiconductor processing, in particular to a plasma processing device and a gas supply method. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process the substrate. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant source gas into the vacuum reaction chamber, and then perform radio frequency on the reaction chamber. Energy input is used to activate the reactive gas to stimulate and maintain the plasma, so that the plasma bombards the substrate on the susceptor to realize plasma processes such as etching of the wafer. [0003] In order to obtain a uniform processing effect in a large-area plasma reaction chamber or to obtain different densities of plasma or other requirements in different regions of the reaction chamber, it is necessary to supply the same or different flow rates of ...

AI Technical Summary

Problems solved by technology

[0004] There are many finished gas proportional splitters. There is an integrated one-point multi-way splitter. The number of outlets of the delivery pipeline is fixed and cannot be increased at will; there are also split-type one-point multi-way splitters. The number of exits can be changed at will, but the entrances of all the roads need to be set together and cannot be separated

The above two types of shunts have a common problem: the cost is high, and the response will slow down as the number of channels increases.

However, there are many problems in this method, such as the voltage signal of the valve is not directly proportional to the valve opening, and the characteristics of different valves are not the same

A simple method is to select valves with similar characteristics to achieve diversion, but when the number of diversion channels increases, it brings a lot of trouble to the selection of valves, and the diverters of different batches are different, resulting in the gas that finally enters different partitions. The flow rate is different from the expected target flow rate, which affects the etching effect of the substrate in the plasma processing device

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