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Method of cleaning a surface

A cleaning and cleaning agent technology, applied in the field of cleaning semiconductor substrates, can solve problems such as reliability, breakdown voltage leakage current defects, etc.

Pending Publication Date: 2022-03-01
エーエスエムアイピーホールディングベーフェー
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Metal contamination on the dielectric, e.g. caused by metal migration or imperfect selective deposition, can cause reliability, breakdown voltage, leakage current and / or defect issues

Method used

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  • Method of cleaning a surface
  • Method of cleaning a surface
  • Method of cleaning a surface

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Embodiment Construction

[0074] While certain embodiments and examples are disclosed below, it should be understood that the invention goes beyond the specifically disclosed embodiments and / or uses thereof and obvious modifications and equivalents. Therefore, the scope of the disclosed invention should not be limited by the specific disclosed embodiments described below.

[0075] The present disclosure generally relates to methods and apparatus for cleaning substrates.

[0076] As used herein, the term "substrate" may refer to any underlying material comprising and / or upon which one or more layers may be deposited. The substrate may comprise a bulk material such as silicon (eg, single crystal silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials. The substrate may comprise a stack of one or more layers overlying the bulk material. Furthermore, the substrate may additionally or alternatively include various fe...

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Abstract

A method for cleaning a substrate is disclosed. The substrate includes a dielectric surface and a metal surface. The method includes providing a cleaning agent to the reaction chamber.

Description

technical field [0001] The present disclosure generally relates to methods and systems for cleaning semiconductor substrates. In particular, the present disclosure relates to vapor phase cleaning for back-end-of-line processing of semiconductor substrates. Background technique [0002] Semiconductor device processing, such as back end processing in particular, includes the use of metal features, such as interconnects. Exemplary metals that can be used include copper and cobalt. Some metals, such as copper, easily diffuse across the entire surface, which can lead to metal contamination of active device areas and can hinder subsequent selective deposition processes. [0003] For example, a back end of line (BEOL) process may include a copper deposition step followed by a chemical mechanical polishing step (CMP). After CMP, there may be queue time between CMP and the next processing step. During this time, the copper lines may become oxidized and the copper oxide may start ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02068H01L21/02041H01L21/0206C11D7/04C11D7/261C23C16/0227C23C16/04C11D2111/22H01L21/67028H01L21/02074H01L21/28562B08B3/08B08B5/00C11D7/264C11D7/245C11D7/265C11D7/02
Inventor 邓少任A.伊利贝里D.基亚佩E.托伊斯G.A.沃尼M.吉文斯V.沙尔玛朱驰宇岩下信哉C.德泽拉V.马德希瓦拉J.W.梅斯M.图米恩A.钱德拉塞卡兰
Owner エーエスエムアイピーホールディングベーフェー