Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor element and manufacturing method thereof

A semiconductor and component technology, applied in the field of semiconductor components, can solve problems such as the inability to obtain a flat surface profile and affect the operation of components

Pending Publication Date: 2022-03-01
UNITED MICROELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the epitaxial layer formed by the epitaxial growth method usually cannot obtain a flat surface profile and affect the operation of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof
  • Semiconductor element and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Please refer to Figure 1 to Figure 5 , Figure 1 to Figure 5 A schematic diagram of a method for fabricating a semiconductor device according to an embodiment of the present invention. Such as figure 1 As shown, a substrate 12 is provided first, and then at least one gate structure 14 , 16 is formed on the substrate 12 . In this embodiment, the method of forming the gate structures 14, 16 is preferably sequentially forming a gate dielectric layer, a gate material layer and a hard mask on the substrate 12, and using a patterned photoresist The etchant (not shown in the figure) is used as a mask to perform a pattern transfer process, with a single etching or successive etching steps to remove part of the hard mask, part of the gate material layer and part of the gate dielectric layer, and then strip the pattern photoresist to form at least one gate structure 14 consisting of a patterned gate dielectric layer 18, a patterned gate material layer 20 and a patterned hard m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor element and a manufacturing method thereof, and the method for manufacturing the semiconductor element comprises the steps: firstly forming a gate structure on a substrate, then forming a plurality of grooves at two sides of the gate structure, forming a buffer layer in the grooves, forming a first linear main body layer on the buffer layer, and forming a second linear main body layer on the first linear main body layer. A second linear body layer is formed on the first linear body layer, a body layer is formed on the second linear body layer, and a cover layer is formed on the body layer.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, in particular to a method for improving the flatness of the epitaxial layer by adjusting the distribution of germanium concentration in the epitaxial layer. Background technique [0002] In order to increase the carrier mobility of the semiconductor structure, compressive stress or tensile stress can be applied to the gate channel. For example, if compressive stress needs to be applied, the prior art often uses selective epitaxial growth (SEG) technology to form an epitaxial structure in a silicon substrate with the same lattice arrangement as the silicon substrate, such as silicon germanium (silicon germanium, SiGe) epitaxial structure. Utilizing the feature that the lattice constant of the silicon germanium epitaxial structure is larger than that of the silicon substrate, stress is generated on the channel region of the P-type metal oxide semiconductor transistor, and the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/06H01L29/08H01L29/161H01L29/78
CPCH01L29/66568H01L29/66795H01L29/78H01L29/785H01L29/0684H01L29/0847H01L29/161H01L29/66636H01L29/66545H01L29/165H01L29/7848H01L29/7833H01L29/16H01L21/0245
Inventor 陈俊宇黄柏霖黄仲逸林耿任林钰书
Owner UNITED MICROELECTRONICS CORP