Electronic package and fabrication method thereof

Abstract

The invention relates to an electronic package and a manufacturing method thereof, comprising embedding a circuit board and a circuit block in a cladding layer, forming circuit structures on two opposite surfaces of the cladding layer, and arranging an electronic component on one of the circuit structures, so that the circuit block and the circuit board are embedded in the cladding layer in a separated manner to separate a current conduction path, therefore, the circuit board cannot be overheated, the problem of warping of the circuit board is avoided, and the structural strength of the coating layer can be improved by embedding the circuit block and the circuit board in the coating layer separately.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to an electronic package with a composite substrate and a manufacturing method thereof. Background technique [0002] With the vigorous development of the electronic industry, electronic products are gradually moving towards the development trend of multi-function and high performance. At present, there are many technologies applied in the field of chip packaging, such as Chip Scale Package (CSP for short), Direct Chip Attached (DCA for short) or Multi-Chip Module packaging (MCM for short). Such as flip-chip packaging modules, or integrating chips into three-dimensional integrated circuit (3D IC) chip stacking modules. [0003] figure 1 It is a schematic cross-sectional view of a conventional semiconductor package 1 . Firstly, a through silicon interposer (TSI for short) 10 is provided with opposite transfer side 10a and die placement side 10b, and the silicon interposer 10 has a plurali...

AI Technical Summary

Problems solved by technology

[0005] However, as the functional requirements of the product increase greatly, the functional requirements of the semiconductor chip 15 also increase accordingly, so the contact points (such as solder bumps 150) of the semiconductor chip 15 and the circuit layout density of the circuit structure 11 increase accordingly. In this case, the volume of the RDL-type circuit structure 11 is too small, resulting in extremely weak structural strength, so it is easy to be affected by high temperature and warpage (warpage), resulting in the circuit breakage of the circuit structure 11

[0006] On the other hand, if in order to avoid the breakage of the circuit of the circuit structure 11, the circuit of the circuit structure 11 needs to be widened to strengthen its structural strength through the metal material of the circuit to avoid warping, but the circuit structure 11 will not satisfy Therefore, it is difficult to increase the wiring density of the wiring structure 11, resulting in the inability to meet the high-density (or multi-functional) contact requirements of the semiconductor chip 15.

Images