Photovoltaic cell and manufacturing method thereof, photovoltaic module

Abstract

The embodiment of the present application relates to the field of solar energy, and provides a photovoltaic cell and its manufacturing method, and a photovoltaic module. The photovoltaic cell includes: a substrate; a first anti-reflection layer located on one side of the substrate; a second anti-reflection layer located on the first anti-reflection layer The layer is away from the side of the substrate, the first anti-reflection layer includes a first silicon oxynitride material, and the second anti-reflection layer includes a second silicon oxynitride material, along the direction perpendicular to the direction of the first anti-reflection layer pointing to the direction of the second anti-reflection layer In the above, the content ratio of oxygen element and nitrogen element in one of the first anti-reflection layer and the second anti-reflection layer tends to increase, and the content ratio of oxygen element to nitrogen element in the other one tends to decrease. The embodiments of the present application are at least beneficial to improving the absorptivity of light incident on the photovoltaic cell by the photovoltaic cell.

Description

technical field [0001] The embodiments of the present application relate to the field of solar energy, and in particular to a photovoltaic cell, a manufacturing method thereof, and a photovoltaic module. Background technique [0002] The reflectivity or absorptivity of photovoltaic cells to sunlight is a key factor affecting the photoelectric conversion efficiency of photovoltaic cells. At present, photovoltaic cells in the industry often use single-layer silicon nitride, multi-layer silicon nitride or a laminated structure of silicon nitride and other material layers as the anti-reflection structure. [0003] However, there is a large internal stress in the silicon nitride film layer, and due to the existence of hydrogen element in the process of preparing the silicon nitride film layer, more defects will be generated in the silicon nitride film layer, which will reduce the nitrogen The absorptivity of silicon film layer to light, thereby reducing the absorptivity of photo...

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Problems solved by technology

[0003] However, there is a large internal stress in the silicon nitride film layer, and due to the existence of hydrogen element in the process of preparing the silicon nitride film layer, more defects will be generated in the silicon nitride film layer, which will reduce the nitrogen The absorptivity of silicon film layer to light, thereby reducing the absorptivity of photovoltaic cells to light

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