Photovoltaic cell, manufacturing method thereof and photovoltaic module

Abstract

The embodiment of the invention relates to the field of solar energy, and provides a photovoltaic cell and a manufacturing method thereof, and a photovoltaic module. The first antireflection layer is located on one side of the substrate; the second antireflection layer is located on the side, away from the substrate, of the first antireflection layer, the first antireflection layer comprises a first silicon oxynitride material, the second antireflection layer comprises a second silicon oxynitride material, and the first silicon oxynitride material and the second silicon oxynitride material are arranged in the direction perpendicular to the first antireflection layer and pointing to the second antireflection layer. The content ratio of the oxygen element to the nitrogen element in one of the first antireflection layer and the second antireflection layer is in an increasing trend, and the content ratio of the oxygen element to the nitrogen element in the other antireflection layer is in a decreasing trend. The embodiment of the invention is at least beneficial to improving the absorptivity of the photovoltaic cell to the light incident on the photovoltaic cell.

Description

technical field [0001] The embodiments of the present application relate to the field of solar energy, and in particular to a photovoltaic cell, a manufacturing method thereof, and a photovoltaic module. Background technique [0002] The reflectivity or absorptivity of photovoltaic cells to sunlight is a key factor affecting the photoelectric conversion efficiency of photovoltaic cells. At present, photovoltaic cells in the industry often use single-layer silicon nitride, multi-layer silicon nitride or a laminated structure of silicon nitride and other material layers as the anti-reflection structure. [0003] However, there is a large internal stress in the silicon nitride film layer, and due to the existence of hydrogen element in the process of preparing the silicon nitride film layer, more defects will be generated in the silicon nitride film layer, which will reduce the nitrogen The absorptivity of silicon film layer to light, thereby reducing the absorptivity of photo...

AI Technical Summary

Problems solved by technology

[0003] However, there is a large internal stress in the silicon nitride film layer, and due to the existence of hydrogen element in the process of preparing the silicon nitride film layer, more defects will be generated in the silicon nitride film layer, which will reduce the nitrogen The absorptivity of silicon film layer to light, thereby reducing the absorptivity of photovoltaic cells to light

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