Method for improving light extraction efficiency of LED by using nanoscale ZnO

A light extraction efficiency, nano-scale technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of complex process, pollution of LED production line, high production cost, etc., and achieve the effect of broad application prospects, low cost and low energy consumption

Inactive Publication Date: 2013-01-30
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

First, photolithography technology can be used for nano-roughening, but due to the limitation of resolution, it is difficult to prepare nano-patterned substrates by traditional photolithography technology, and advanced photolithography technology with extremely high resolution, such as electron beam photolithography Lithography and extreme ultraviolet lithography, nano-roughening, high production cost
Second, the patent publication No. CN 101373714A discloses a method for preparing a nanoscale pattern substrate using metal self-assembly technology, but it requires multi-step processes such as deposition of silicon oxide, deposition of me...

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  • Method for improving light extraction efficiency of LED by using nanoscale ZnO
  • Method for improving light extraction efficiency of LED by using nanoscale ZnO
  • Method for improving light extraction efficiency of LED by using nanoscale ZnO

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific examples and with reference to the accompanying drawings, but the present invention is not limited to the following examples. The nanoscale ZnO roughness was tested by SEM and AFM.

[0029] Such as figure 1 as shown, figure 1 It is a flow chart of the method for enhancing LED light extraction efficiency provided by the present invention. Through this method, the upper surface of the window layer of the LED can be roughened at the nanometer level, thereby achieving the purpose of improving the LED light extraction efficiency. The method includes:

[0030] Step 1: Prepare the reaction solution - dilute 12mol / L (36-38%) concentrated hydrochloric acid to 1.72mol / L with deionized water; add ZnO powder (analytical pure) to the diluted hydrochloric acid at room temperature and stir until s...

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Abstract

The invention relates to a method for improving the light extraction efficiency of an LED by using nanoscale ZnO, belonging to the technical field of LEDs. The method comprises the following steps of: adding zinc oxide to diluted hydrochloric acid to form a saturated solution, then adding an H2O2 solution to the saturated solution, adding into a 40-DEG C constant-temperature water bath, putting an LED chip, with the light emergent surface facing upwards, into a reaction solution, and obtaining a nanoscale ZnO coarsened LED chip after 0.5-1h; and photoetching to form electrode patterns to finish the process of sputtering a P electrode. The method disclosed by the invention can be used for carrying out nanoscale ZnO deposition on a window layer of the LED so as to realize surface coarsening, thereby achieving the purpose of improving the light extraction efficiency of the LED.

Description

technical field [0001] The invention belongs to the technical field of LEDs, in particular to a surface roughening method for enhancing the light extraction efficiency of a light emitting diode (LED: Light Emitting Diode). Background technique [0002] Semiconductor LEDs have become a new generation of lighting sources in the 21st century due to their high electro-optic conversion efficiency, long life, and environmental protection. With the maturity of III-V semiconductor technology, the development of LED devices continues to develop in the direction of high efficiency and high brightness. [0003] Thanks to the introduction of epitaxial growth technology MOCVD and multi-quantum well structure (MQW), the internal quantum efficiency (quantum efficiency) of LED can be greater than 90%, or even close to 100%, and there is little room for improvement. However, since the semiconductor material usually has a high dielectric coefficient, the light generated in the active layer c...

Claims

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Application Information

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IPC IPC(8): H01L33/22
Inventor 李建军马凌云李佳莼
Owner BEIJING UNIV OF TECH
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