Millimeter wave Doherty power amplifier chip based on quasi-elliptical low-pass filtering structure

A low-pass filtering and power amplifier chip technology, which is applied to amplifiers with semiconductor devices/discharge tubes, amplifiers, and parts of amplifying devices, etc. Doherty characteristics, compact structure, fallback and high saturation efficiency

Pending Publication Date: 2022-03-04
SOUTHEAST UNIV
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Problems solved by technology

But at mmWave frequencies, this loss is unacceptable
Using an additional parallel LC resonant network not only fails to improve the efficiency of the power amplifier, but also leads to further deterioration of the power efficiency characteristics of the power amplifier

Method used

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  • Millimeter wave Doherty power amplifier chip based on quasi-elliptical low-pass filtering structure
  • Millimeter wave Doherty power amplifier chip based on quasi-elliptical low-pass filtering structure
  • Millimeter wave Doherty power amplifier chip based on quasi-elliptical low-pass filtering structure

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Embodiment 1

[0041] see Figure 1-Figure 5 In this embodiment, a millimeter-wave Doherty power amplifier chip based on a quasi-elliptic low-pass filter structure is provided, and the power amplifier chip specifically includes:

[0042] A broadband input power splitter, the input end of which is connected to the radio frequency signal input end;

[0043] Carrier amplifying circuit, its input end is connected with the first output end of broadband input power splitter; This carrier amplifying circuit is mainly made up of phase-shifting network, first input matching network, driver stage carrier amplifier T1, first interstage matching network, power The first stage carrier amplifier T2 and the first output matching network are sequentially cascaded;

[0044]The peak amplifying circuit, its input end is connected with the second output end of the broadband input power divider; The peak amplifying circuit is mainly composed of the second input matching network, the driving stage peak amplifier...

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Abstract

The invention discloses a millimeter wave Doherty power amplifier chip based on a quasi-elliptical low-pass filtering structure. The millimeter wave Doherty power amplifier chip comprises a broadband input power divider, a carrier amplification circuit, a peak amplification circuit and a post-matching network, the carrier amplification circuit is formed by cascading a first input matching network, a driving stage carrier amplifier T1, a first inter-stage matching network, a power stage carrier amplifier T2 and a first output matching network in sequence; the peak amplifying circuit is formed by cascading a second input matching network, a driving stage peak amplifier T3, a second inter-stage matching network, a power stage peak amplifier T4 and a second output matching network in sequence; compared with a traditional millimeter-wave gallium nitride monolithic integrated Doherty power amplifier chip, the millimeter-wave gallium nitride monolithic integrated Doherty power amplifier chip has the advantages that a fundamental wave and second harmonic matching network and a load modulation network are fused, the efficiency of the power amplifier in a backoff area is further improved, and the millimeter-wave gallium nitride monolithic integrated Doherty power amplifier chip can be applied to a 5G millimeter-wave large-scale MIMO mobile communication system.

Description

technical field [0001] The invention relates to the technical field of millimeter-wave power amplifiers, in particular to a millimeter-wave Doherty power amplifier chip based on a quasi-elliptic low-pass filter structure. Background technique [0002] Enabling the millimeter wave frequency band is one of the most important technological innovations of 5G. Due to its higher frequency and greater loss characteristics, the millimeter wave frequency band will bring greater challenges to the design of physical layer devices. In addition, in order to further improve the utilization of spectrum resources, a more complex high-order modulation method and a more complex carrier aggregation technology (CarrierAggregation, CA) with more carriers will be used, which will lead to peak-average The ratio is getting higher and higher. Therefore, it is very necessary to improve the efficiency of the millimeter-wave power amplifier at a larger backoff output power. [0003] In addition, a l...

Claims

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Application Information

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IPC IPC(8): H03F1/02H03F3/213
CPCH03F1/0288H03F3/213
Inventor 朱晓维刘睿佳张雷赵子明董勤曹阳
Owner SOUTHEAST UNIV
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