The invention provides an electrically erasable programmable read only memory (EEPROM) storage chip especial for an intelligent ammeter. The EEPROM storage chip comprises a storage array which is composed of nanocrystalline storage units, wherein each of the nanocrystalline storage units comprises a semiconductor substrate material, a source conduction region, a leak conduction region, a tunneling dielectric layer, a nanocrystalline storage layer, an isolation dielectric layer and a transistor control grid, the source conduction region and the leak conduction region are formed by heavy doping in a substrate region of the semiconductor substrate material, the tunneling dielectric layer is covered on the surface of a channel between the source conduction region and the leak conduction region, the nanocrystalline storage layer is covered on the tunneling dielectric layer, the tunneling dielectric layer encircles or covers the nanocrystalline storage layer, the transistor control grid is covered on the isolation dielectric layer, and the storage array utilizes a framework which is capable of performing random addressing, programming and erasing to each storage unit in the array. Nanocrystalline floating gate storage structures are used as the storage units, so that manufacturing processes can be simplified, device sizes and chip areas are lessened, the number of masks to be manufactured is reduced, and manufacturing costs of the storage chip are reduced.