Fabrication method of ultra-thin silicon transfer plate without temporary bonding and un-bonding processes
A production method and temporary bonding technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of colloid residual pollution, high equipment cost, and many process steps, and achieve low process cost and high reliability , The effect of low process difficulty
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Embodiment 1
[0047] A method for making an ultra-thin silicon adapter plate without temporary bonding, which is suitable for making an ultra-thin silicon adapter plate. The thickness range of the obtained ultra-thin silicon adapter plate is between 50-200 μm, and the area is 25mm×25mm , the wiring width is more than 1 μm, and the through-silicon via has a diameter of more than 30 μm, and the said through-silicon via is only used for side wall metallization and has no solid hole feature.
[0048] As a specific embodiment, in this embodiment, an ultra-thin silicon interposer board with a thickness of 150 μm, an area of 25 mm×25 mm, a wiring width of 20 μm, and a TSV diameter of 60 μm is taken as an example for illustration.
[0049] In this embodiment, the side of the ultra-thin silicon interposer silicon chip where the chip circuit is arranged is called the front side, and the other side opposite to the chip circuit is called the back side.
[0050] The manufacturing method of the ultra-t...
Embodiment 2
[0074] The difference between this embodiment and embodiment 1 is that the process methods of step 3 and step 10 are adjusted, and other steps are the same as embodiment 1. Compared with Embodiment 1, this embodiment is more suitable for making an ultra-thin silicon interposer with a thickness less than 100 μm.
[0075] As a specific embodiment, in this embodiment, an ultra-thin silicon interposer board with a thickness of 50 μm, an area of 25 mm×25 mm, a wiring line width of 20 μm, and a TSV diameter of 60 μm is taken as an example for illustration.
[0076] In step 3 of this embodiment, a silicon cavity 4 with a depth of 180 μm is manufactured, that is, the thickness d of the functional region of the interposer board obtained is 100 μm.
[0077] Step 10 of this embodiment specifically includes:
[0078] On the front side of the silicon wafer 1, spray glue to form a photoresist protective layer; on the back side of the silicon wafer 1, remove the silicon dioxide layer on t...
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