Semiconductor device

Abstract

Provided is a semiconductor device including a substrate having a P-type conductivity, a buried layer having an N-type conductivity, an NPN bipolar junction transistor (BJT), and a first well region having the P-type conductivity. The buried layer is located on the substrate. The NPN BJT is located on the buried layer. The first well region is located between the buried layer and the NPN BJT. TheNPN BJT is separated from the buried layer by the first well region.

Description

technical field [0001] The present invention relates to an integrated circuit, and more particularly to a semiconductor device. Background technique [0002] The bipolar and complementary Metal-Oxide-Semiconductor (BiCMOS) element is a combination of a bipolar junction transistor (BJT) element and a complementary metal-oxide-semiconductor element on the same wafer An integrated circuit. Therefore, BiCMOS devices not only have the high speed of BJT devices, but also have the advantages of low energy consumption and high integration of CMOS devices. [0003] On the other hand, with the rising awareness of environmental protection, high voltage integrated circuits with low power consumption and high-efficiency energy conversion are attracting more and more attention. In general, a high voltage integrated circuit may include a high voltage side region and a low voltage side region. The voltage difference between the high side region and the low side region can be as high as 1...

AI Technical Summary

Problems solved by technology

However, the formation of isolated BJT elements in the high-voltage side region not only complicates the manufacturing process, but also forms multiple parasitic BJT structures at the same time.

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