Power MOS drive circuit

A driving circuit and power technology, which is applied in the field of power MOS driving circuits, can solve the problems that the power supply VCC cannot start the power MOS switch, the power consumption is large, and the cost of the power MOS driving circuit becomes higher, so as to save area and cost, provide driving ability, Effect of preventing gate breakdown

Pending Publication Date: 2022-03-08
西安鼎芯微电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present disclosure provides a power MOS driving circuit to solve the problem existing in the prior art that the power MOS switch cannot be started when the voltage of the power supply VCC in the power MOS driving circuit is too low. High cost and high power consumption technical problems

Method used

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Embodiment Construction

[0015] It should be noted that, in the case of no conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and embodiments.

[0016] In order to enable those skilled in the art to better understand the present disclosure, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only It is an embodiment of a part of the present disclosure, but not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present disclosure.

[0017] It should be noted that the terms "first" a...

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Abstract

The invention discloses a power MOS (Metal Oxide Semiconductor) driving circuit, which comprises a second NMOS (N-channel Metal Oxide Semiconductor) transistor NM2, a third NMOS transistor NM3 and a clamping circuit 3 arranged between the second NMOS transistor NM2 and the third NMOS transistor NM3, and is characterized in that a source electrode of the second NMOS transistor NM2 is connected with a drain electrode of the third NMOS transistor NM3 and is used for generating an output control square wave; and the clamping circuit 3 is used for limiting the output of the high level of the control square wave.

Description

technical field [0001] The present application relates to the technical field of power MOS drive circuits, in particular to a power MOS drive circuit. Background technique [0002] As an electronic switching device, power MOS has the characteristics of fast switching speed, low conduction loss and low production cost, and is widely used in many power supply fields such as battery chargers and power adapters. Almost all power products are inseparable from electronic switches, and power MOS is currently the most widely used electronic switch. How to match the device characteristics of power MOS in use has become an important research direction, and how to ensure the power of power MOS reliability is extremely important. [0003] The gate and source breakdown voltages of most current power MOS switches will not exceed 30V. The device characteristic of the power MOS switch is that when the gate-source voltage is higher, its on-resistance is smaller, the loss as a switch will b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687
CPCH03K17/687
Inventor 雷晗夏云凯
Owner 西安鼎芯微电子有限公司
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