Compound semiconductor through hole structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as unevenness and high resistance, improve device density, reduce contact resistance, and avoid metal The effect of bridging
Pending Publication Date: 2022-03-11
GALLIUM ADVANCE SEMICON TECH CO
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Problems solved by technology
[0004] The main purpose of the present invention is to solve a compound semiconductor through-hole structure and its manufacturing method, aiming to solve the problem of high resistance and unevenness
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[0035] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that when a device is said to be "fixed" to another device, it may be directly on the other device, or there may be one or more intervening devices therebetween. When a device is referred to as being "connected to" another device, it can be directly connected to the other device, or one or more intervening devices may be present therebetween. The terms "vertical", "horizontal", "left", "right", "inner", "outer" and similar expressions are used in this specification for the purpose of description only. In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating relative importance, or implicitly indicating the quantity of indicated technical features. Therefore,...
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The invention relates to the technical field of semiconductor manufacturing, and discloses a compound semiconductor through hole structure and a manufacturing method thereof. The compound semiconductor through hole structure comprises a semiconductor substrate; the contact window is arranged on the semiconductor substrate; the first metal layer is arranged in the contact window; the insulating layer covers the first surface, the contact window and the first metal layer; the through hole is vertically formed in the first metal layer and penetrates through the insulating layer, the conductive layer is arranged in the through hole and is conductively connected with the first metal layer, and the adhesion layer is arranged between the insulating layer and the conductive layer; a low-resistance path is formed by providing at least one second metal layer on the conductive layer and conductively connecting the conductive layer.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a compound semiconductor through-hole structure and a manufacturing method thereof. Background technique [0002] In the original compound semiconductor manufacturing industry, the metal layer is usually deposited by the sputtering metal process and the high-temperature reflow flattening process is used to fill the reflow material to remove the high and low steps caused by the previous process to manufacture semiconductor devices. However, the traditional sputtering metal process Filling the reflow material and adding a high-temperature reflow flattening process will have the following five disadvantages: 1. When the metal layer is deposited in the sputtering metal process, it is easy to cause damage to the crystal lattice on the chip surface and increase the impedance; 2. The sputtered metal layer is aluminum. The nickel alloy layer has high impedance, which ...
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Login to View More IPC IPC(8): H01L23/522H01L21/768
CPCH01L23/5226H01L21/76877
Inventor 陈正培柴佳欣徐文凯
Owner GALLIUM ADVANCE SEMICON TECH CO