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Device for suppressing oscillations

A device and transistor technology, applied in the field of suppressing oscillations in semiconductor devices, can solve problems such as electromagnetic interference, non-compliance with electromagnetic interference restrictions, etc.

Pending Publication Date: 2022-03-15
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Commutation oscillations may cause EMI and / or non-compliance with EMI limits
Such commutation oscillations are undesirable for applications utilizing high load current

Method used

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  • Device for suppressing oscillations
  • Device for suppressing oscillations
  • Device for suppressing oscillations

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Embodiment Construction

[0010] The claimed subject matter is now described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of claimed subject matter. It may be evident, however, that claimed subject matter may be practiced without these specific details. In other instances, well-known structures and devices are shown in block diagram form in order to facilitate describing the claimed subject matter.

[0011] In the field of electronics, transistors such as Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFETS), Silicon Carbide Junction Gate Field Effect Transistors (SiC JFET), unipolar power transistors can be used in various applications, for example for high power applications and / or switches in high voltage applications. When the transistors of the device are switche...

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Abstract

An apparatus for suppressing oscillations is disclosed. The apparatus includes a unipolar power transistor and an RC buffer. The RC buffer has a capacitor between the polysilicon structure and the semiconductor substrate. The capacitor has a p-n junction. The RC buffer has a resistor between the source of the unipolar power transistor and the first layer forming the capacitor. The unipolar transistor and the RC buffer are coupled in parallel. The RC buffer and the unipolar power transistor are monolithically formed on a semiconductor substrate.

Description

technical field [0001] This disclosure relates to the field of suppressing oscillations within semiconductor devices. Background technique [0002] Various types of transistors such as Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFETs) and others can be used for high power and high voltage range applications such as traction and wind energy applications. These types of applications may use high current and high power modules or connect modules in parallel. Operation of these transistors may result in relatively high commutation inductance, for example in the range of 20nH to 100nH per commutation path. If the load current in one of these transistors is turned off quickly, commutation oscillations may be triggered. Commutation oscillations may cause EMI and / or non-compliance with EMI limits. Such commutation oscillations are undesirable for applications utilizing high load currents. Contents of the invention [0003] This Summary is provide...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/92
CPCH01L29/7802H01L29/7803H01L29/92H01L29/7813H01L29/1608H01L29/2003H01L27/0629H01L28/20H01L29/8083H02H9/04
Inventor 德塔德·彼得斯托马斯·贝斯勒保罗·索霍尔
Owner INFINEON TECH AG
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