Stimulated Brillouin scattering and stimulated Raman scattering combined compression ultrashort pulse laser

A technology of stimulated Raman scattering and stimulated Brillouin, which is used in lasers, laser parts, and laser light scattering effects, etc., can solve the problem of unobtainable, unobtainable ultra-short and ultra-fast pulsed lasers, low pulse energy, etc. problem, to achieve the effect of improving energy conversion efficiency

Pending Publication Date: 2022-03-18
HEBEI UNIV OF TECH
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  • Abstract
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Problems solved by technology

[0003] At present, there are three main ways to obtain short-pulse laser: (1) Q-switching technology, by shortening the cavity length, sub-nanosecond short-pulse laser can be obtained, combined with traveling wave amplification, sub-nanosecond high-energy laser can be obtained [such as Invention Patent Publication No. : CN110880672B, patent name: a high-repetition-frequency high-energy nanosecond-level pulse laser and its application method], but this method can no longer obtain shorter pulses; (2) mode-locking technology, which can obtain femtosecond to Picosecond ultrashort and ultrafast pulses, but the generated pulse energy is small, usually in the nanojoule to microjoule level, and the subsequent amplification is more complicated [such as the invention patent publication number: CN101562310, patent name: passive mode-locked picosecond laser ]; (3) Stimulated Brillouin Scattering (SBS) to compress nanosecond pulses to the order of hundreds of picoseconds, and this method can obtain high-energy hundreds of picosecond lasers , but limited by physical limits, it is impossible to obtain ultrashort ultrafast pulse laser

Method used

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  • Stimulated Brillouin scattering and stimulated Raman scattering combined compression ultrashort pulse laser
  • Stimulated Brillouin scattering and stimulated Raman scattering combined compression ultrashort pulse laser
  • Stimulated Brillouin scattering and stimulated Raman scattering combined compression ultrashort pulse laser

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Embodiment 1

[0061] Embodiment 1: This embodiment has the same structure as the above-mentioned specific embodiment, and the SRS generation and amplification system is amplified once, and has the following parameters:

[0062] A single longitudinal mode laser is used as the pump source 1, the output wavelength is 1064nm, the divergence angle is 0.35mrad, and the peak power is 4MW; the medium in the pool of SBS pulse width compression cell 5-2 is FC-770 (phonon lifetime is 600ps, 1064nm The lower Brillouin gain coefficient is 3.5cm / GW), and the length of the pool is 100cm; the focal length of the concave reflector mirror 5-5 is 33cm, and the distance between the concave reflector 5-5 and the SBS pulse width compression pool 5-2 is 10cm; SRS The gain medium producing pool 7-5 and the first SRS amplification pool 7-7 is Ba(NO 3 ) 2 For crystals, the length of the SRS generation pool 7-5 is 3 cm, and the length of the first SRS amplification pool 7-7 is 7.5 cm; other types of devices are not ...

Embodiment 2

[0063] Embodiment 2: This embodiment has the same structure as Embodiment 1, Figure 5 It is the pulse width measurement diagram when the output wavelength of pump source 1 is 1064nm and the pulse width is 8ns, (a) is the output pulse width measurement diagram of pump source 1, (b) is the SBS pulse width compression with adjustable pulse width The output pulse width measurement diagram of system 5, (c) is the final output pulse width measurement diagram of SRS generation and amplification system 7, and the pulse widths are 8ns, 711ps and 97ps respectively.

Embodiment 3

[0064] Embodiment 3: TEC cooling chip 5-3 selects devices with high temperature adjustment accuracy as far as possible, in order to perform more accurate pulse width adjustment. The temperature adjustment range is -30 to 130 degrees Celsius, and the adjustment temperature cannot be higher than the SBS pulse width compression used. Pool 5-2 The boiling point of the medium in the pool. And in order to obtain a more ideal output pulse width, the output pulse width of the SBS pulse width compression system 5 with adjustable pulse width should be less than 2 ns as much as possible.

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Abstract

The invention relates to a stimulated Brillouin scattering and stimulated Raman scattering combined compression ultrashort pulse laser, which comprises a pumping source, an optical isolation system, a half-wave plate, a first polaroid, a pulse width adjustable SBS pulse width compression system, a first reflector and an SRS generation amplification system, and is characterized in that a single longitudinal mode laser is used as the pumping source to emit pumping light; sequentially passing through an optical isolation system, a half-wave plate and a first polaroid and then entering an SBS pulse width compression system; pump light is compressed into hundred-picosecond laser in the SBS pulse width compression system, and the compressed hundred-picosecond laser is reflected by the first polaroid and the first reflector and then enters the SRS generation amplification system to be further compressed and amplified. Through the technical scheme of combined compression of the SBS pulse width compression technology and the SRS pulse width compression technology, the compression limit restriction of the SBS pulse width compression technology is overcome, and laser pulse width output with narrower pulse width than that of the Q-switched technology and higher energy than that of the mode-locked technology is achieved.

Description

technical field [0001] The invention relates to the technical field of high-energy short-pulse lasers, in particular to a compressed ultrashort-pulse laser combined with stimulated Brillouin scattering and stimulated Raman scattering. Background technique [0002] Ultrashort pulse laser has a wide range of applications in many fields such as shock dynamics, laser precision ranging, ultra-long-distance laser radar, laser medical equipment, and laser microprocessing. has important meaning. [0003] At present, there are three main ways to obtain short-pulse laser: (1) Q-switching technology, by shortening the cavity length, sub-nanosecond short-pulse laser can be obtained, combined with traveling wave amplification, sub-nanosecond high-energy laser can be obtained [such as Invention Patent Publication No. : CN110880672B, patent name: a high-repetition-frequency high-energy nanosecond-level pulse laser and its application method], but this method can no longer obtain shorter p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/08H01S3/102H01S3/11H01S3/30
CPCH01S3/30H01S3/11H01S3/1028H01S3/08022
Inventor 刘照虹李绍文罗甜甜樊榕纪文强陈婷婷王雨雷吕志伟
Owner HEBEI UNIV OF TECH
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