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Photoetching method

A lithography and photoresist layer technology, applied in the field of super-resolution imaging, can solve the problems of inability to obtain a higher resolution lithography structure, limited resolution of SP lithography, etc., so as to solve the limited resolution and improve the resolution. force effect

Active Publication Date: 2022-03-22
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the concept of realizing the present invention, the inventors found that the resolution of SP lithography is limited due to the existence of the optical diffraction effect of the surface plasmon lithography technology, and it is impossible to obtain a lithography structure with higher resolution

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0055] image 3 A structural diagram corresponding to each flow of the photolithography method provided in Example 1 of the present disclosure is schematically shown.

[0056] Such as image 3 As shown, first, a layer of Si film is prepared on the surface of the quartz photolithography substrate as the functional film layer 2 . Then prepare a layer of thickness d on the Si film 1 The Ag film of =40nm is used as the reflective auxiliary imaging film layer 3 . A layer of first photoresist layer 4 (193 nm deep ultraviolet photoresist) is coated on the Ag film, and the thickness of the first photoresist layer 4 is 100 nm. The corresponding structure is as image 3 Shown in (a).

[0057] Next, 193 nm projection lithography is performed on the first photoresist layer 4 to obtain a first photoresist structure composed of the first photoresist layer 4 , which is a one-dimensional grating structure with a period of 88 nm. The corresponding structure is as image 3 Shown in (b). ...

example 2

[0067] Figure 4 A structural diagram corresponding to each flow of the photolithography method provided in Example 2 of the present disclosure is schematically shown.

[0068] Such as Figure 4 As shown, first, a layer of SiO was prepared on the surface of the silicon photolithographic substrate 2 Functional film layer 2 as a film. Then on SiO 2 Prepare a layer of thickness d on the membrane 1 The Ag film of =40nm is used as the reflective auxiliary imaging film layer 3, and a first photoresist layer 4 (PHS photoresist) is coated on the Ag film, and the thickness of the first photoresist layer 4 is 40nm. On the first photoresist layer 4, a 15nm surface Ag film is vapor-deposited. The corresponding structure is as Figure 4 Shown in (a).

[0069] Next, perform SP lithography on the first photoresist layer 4, and obtain a first photoresist structure composed of PHS photoresist after removing the surface Ag film and developing. non-periodic structure. The corresponding ...

example 3

[0079]First, a layer of Si was prepared on the surface of the glass photolithographic substrate 3 N 4 The film serves as the functional film layer 2 . Then in Si 3 N 4 Prepare a layer of thickness d on the membrane 1 =50nm Al film as the reflective auxiliary imaging film layer 3 . Coat one deck first photoresist layer 4 (PHS photoresist) on the All film, the thickness d of the first photoresist layer 4 2 = 20nm.

[0080] Next, electron beam direct writing is performed on the first photoresist layer 4, and a first photoresist structure composed of PHS photoresist is obtained after development. The first photoresist structure is an L-shaped grating structure with a center-to-line spacing of 100 nm.

[0081] Next, use the photoresist of the first photolithographic structure as a masking layer to perform ICP etching on the A1 film, and transfer the photoresist pattern of the first photolithographic structure to the A1 film to obtain a reflective auxiliary imaging film layer ...

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Abstract

The invention provides a photoetching method. The photoetching method comprises the following steps: sequentially preparing a functional film layer, a reflective auxiliary imaging film layer and a first photoresist layer which are stacked on the surface of a photoetching substrate; and photoetching the first photoresist layer to obtain a first photoetching structure. And etching the reflective auxiliary imaging film layer by taking the first photoetching structure as a masking layer so as to transfer the pattern of the first photoetching structure to the reflective auxiliary imaging film layer. And sequentially preparing a second photoresist layer and a transmission-type auxiliary imaging film layer which are stacked on the pattern of the reflection-type auxiliary imaging film layer. And performing surface plasma photoetching by taking the pattern of the reflective auxiliary imaging film layer as a mask, and developing the second photoresist layer after removing the transmissive auxiliary imaging film layer to obtain a second photoetching structure. And etching the functional film layer by taking the second photoetching structure as a masking layer so as to transfer the pattern of the second photoetching structure to the functional film layer to obtain a third photoetching structure. According to the method disclosed by the invention, the photoetching resolution can be improved.

Description

technical field [0001] The present disclosure relates to the technical field of super-resolution imaging, and in particular to a photolithography method. Background technique [0002] Surface plasmons exhibit many novel optical phenomena in subwavelength structures. In recent years, there have been various reports on the application of surface plasmons' singular optical properties. The devices prepared based on surface plasmon (SP) lithography technology can have smaller feature sizes than conventional lithography methods, and the lithography uniformity is also better. At the same time, different structural feature sizes can be processed at one time, with resolution High, low requirements for lithography equipment and other advantages. For example, the metal-dielectric-metal structure plays an important role in overcoming the diffraction-limited optical behavior and has become a typical structure for super-resolution imaging and lithography. [0003] In realizing the conce...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F7/09
CPCG03F7/70033G03F7/09
Inventor 罗先刚刘凯鹏罗云飞牟帅高平赵泽宇
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI