Insulated gate bipolar transistor (IGBT) power module packaging structure with low stress and high thermal conductivity

A power module and packaging structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of high cost, reduce device junction temperature, avoid warping or fracture, Avoid the effect of deterioration or even failure

Pending Publication Date: 2022-03-25
YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The thermal expansion coefficient of silicon nitride matches silicon very well and has high thermal conductivity, which is easy to metallize and machine, but the cost is twice as expensive as alumina

Method used

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  • Insulated gate bipolar transistor (IGBT) power module packaging structure with low stress and high thermal conductivity
  • Insulated gate bipolar transistor (IGBT) power module packaging structure with low stress and high thermal conductivity
  • Insulated gate bipolar transistor (IGBT) power module packaging structure with low stress and high thermal conductivity

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Embodiment Construction

[0034] The present invention as Figure 1-7 As shown, a low stress and high thermal conductivity IGBT power module packaging structure includes a substrate 1, an insulating substrate substrate 2 and a chip 5 bonded sequentially from bottom to top;

[0035] The upper metal layer 21 and the lower metal layer 23 are respectively bonded to the upper top surface and the lower bottom surface of the insulating substrate, that is, the upper top surface of each first insulating substrate substrate 221 and each second insulating substrate substrate of the insulating substrate. The upper top surface of the sheet 222 is respectively bonded to the lower bottom surface of the upper metal layer 21, and the lower bottom surface of each first insulating substrate substrate 221 and the lower bottom surface of each second insulating substrate substrate 222 of the insulating substrate are respectively bonded to the lower surface of the upper metal layer 21. Bonding on the top surface of the metal...

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Abstract

The invention relates to a low-stress high-heat-conduction IGBT power module packaging structure. Comprising a substrate, an insulating substrate and a chip which are sequentially bonded from bottom to top, the insulating substrate comprises an upper metal layer, an insulating substrate and a lower metal layer which are sequentially bonded from top to bottom; the insulating substrate comprises a plurality of first insulating substrate substrates and a plurality of second insulating substrate substrates; the plurality of first insulating substrates are respectively of a rectangular structure and are uniformly distributed at intervals; the second insulating substrates are embedded between the adjacent first insulating substrates, and the side faces of the second insulating substrates are attached to each other. According to the invention, an effective heat dissipation channel is provided, the junction temperature of the device and the influence of the junction temperature on the characteristics of the device are reduced, the structural stress strain can be effectively released, and the performance degradation and failure of the device caused by the action of the structural stress strain on the insulating substrate, the chip and the solder layer are avoided.

Description

technical field [0001] The invention relates to the technical field of power electronic devices, in particular to an IGBT power module packaging structure with low stress and high thermal conductivity. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) power devices are used in a wide range of fields from inverters for hybrid vehicles to power converters for wind turbines, and have evolved from conventional IGBT power devices to IGBT power module or IGBT intelligent power module. In order to improve the current handling capability of the IGBT power module, multiple IGBT chips are connected in parallel in the IGBT power module, and freewheeling diodes are integrated according to application requirements. In the current technology, an insulating substrate is used between the silicon chip, the substrate, and the heat dissipation layer of the power module. According to the rated power of different devices, IGBT power modules use different insulating substrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/14H01L23/373H01L29/739H01L21/48
CPCH01L23/14H01L23/3736H01L21/4803H01L29/7393
Inventor 赵成王毅
Owner YANGZHOU YANGJIE ELECTRONIC TECH CO LTD
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