Single photon avalanche diode and forming method thereof
A single-photon avalanche and diode technology, which is applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc. Small, enhanced photon detection efficiency, the effect of increased thickness
Pending Publication Date: 2022-03-25
WUHAN XINXIN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] At present, single photon avalanche diodes usually use an N well (NW) in a p-type semiconductor substrate to construct the doped region of the diode structure. The depletion layer of the diode structure can be reduced by reducing the concentration of ion implantation in the N well or substrate. Increasing the thickness, however, reducing the concentration of ion implantation in the N well or substrate will affect the electrical performance of the single photon avalanche diode (such as increased breakdown voltage)
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] The single photon avalanche diode and its forming method of the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be understood that the drawings in the description are all in very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0032] It should be noted that the terms "first", "second" and the like hereinafter are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances, for example, to enable the embodiments of the invention described herein to be operated in other sequences than described or illustrated here...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a single photon avalanche diode and a forming method thereof. In the single photon avalanche diode, a first well region and a surrounding substrate region form a diode structure, a depletion thickness adjusting region isolated from the first well region is further formed in a substrate, the doping type of the depletion thickness adjusting region is the same as that of the first well region, and the doping type of the depletion thickness adjusting region is the same as that of the first well region. The depth of the depletion layer in the substrate is larger than the maximum injection depth of doped ions in the first well region in the substrate, when the single-photon avalanche diode works, the diode structure is reversely biased, minority carriers, on one side of the first well region, of the depletion layer drift downwards, and the depletion layer drifts downwards. The multiple carriers in the depletion thickness adjusting region drift towards the direction of the first well region along with the drift motion of the minority carriers below the first well region, so that the thickness of the depletion layer is increased, the photon detection efficiency of the device is enhanced, and the influence on the electrical performance of the single photon avalanche diode is small.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single photon avalanche diode and a forming method thereof. Background technique [0002] Single photon avalanche diode, referred to as SPAD (Single Photon Avalanche Diode), is a solid-state photodetector that realizes photodetection based on the reverse bias voltage exceeding the breakdown region of the pn junction. In single photon avalanche diodes, the pn junction is reverse biased at a voltage higher than the breakdown voltage, where the internal photoelectric effect (the emission of electrons or another type of charge carriers when a material is struck by a photon) Under the action, an avalanche current is generated. Very low signal intensities, for example down to the single photon level, can be detected with single photon avalanche diodes. Single-photon detectors based on single-photon avalanche diodes can be used in highly sensitive photon-harvesting environmen...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L31/107H01L31/0352H01L31/18
CPCH01L31/107H01L31/035272H01L31/1804Y02P70/50
Inventor 魏丹清朱健方慧风
Owner WUHAN XINXIN SEMICON MFG CO LTD