Epitaxial growth apparatus

A technology of epitaxial growth and induction coil, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc. It can solve the problems of uneven quality of epitaxial layer, the inability to control the speed of multiple trays independently, and unbalanced temperature. , to achieve the effect of ensuring temperature balance, reducing temperature difference, and good quality
CN114250451AActive Publication Date: 2022-03-29ZHEJIANG QIUSHI SEMICON EQUIP CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG QIUSHI SEMICON EQUIP CO LTD
Publication Date
2022-03-29

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Abstract

The invention provides an epitaxial growth device which comprises an induction coil and a reaction body, and the induction coil is arranged on the peripheral side of the reaction body in a surrounding mode; the reaction body comprises a heating seat and a plurality of trays; a plurality of working spaces are arranged in the heating seat, the trays are positioned in the working spaces, and each tray corresponds to one working space; wherein the trays are used for bearing a substrate, and each tray can independently rotate relative to the heating seat. The epitaxial growth device provided by the invention is provided with a plurality of working spaces, and a plurality of epitaxial layers can be generated simultaneously, so that the working efficiency is improved, and the yield is effectively improved; meanwhile, through independent control over the multiple trays, it is guaranteed that the quality of products produced on each tray is good, and the quality of products produced in the same batch is consistent.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor epitaxial growth, in particular to an epitaxial growth device. Background technique

[0002] Epitaxial growth is an important part of the semiconductor industry chain. The quality of epitaxial films directly restricts the performance of subsequent devices. With the increasing demand for high-quality semiconductor devices in the industry, high-efficiency and high-quality epitaxial equipment has been obtained. More and more attention.

[0003] Epitaxial growth mainly refers to the growth of a layer of high-quality film on the substrate. There are many methods for growing epitaxial layers, but the most commonly used method is chemical vapor deposition (CVD). Chemical vapor deposition refers to chemical gas or vapor in the substrate A method of surface reaction synthesis of coatings or nanomaterials; two or more reaction media (the reaction media is usually gaseous) are introduced into a workin...

Claims

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