Plasma doping method of powder material

Abstract

The invention belongs to the field of plasma doping, and particularly relates to a plasma doping method of powder materials. A plasma doping method is characterized by comprising the steps as follows: an acceptor powder material is added to a plasma doping chamber; a donor gas is introduced into the plasma doping chamber; the acceptor powder material is in a stable fluidized state by controlling the flow of the donor gas; an excitation power supply is started to activate the donor gas and to form non-equilibrium plasma through dielectric barrier discharge; active particles in the non-equilibrium plasma enter the acceptor powder material to complete doping; and the acceptor powder material is activated under the action of an electric field and a magnetic field and the intrinsic property of the acceptor powder material is also strengthened. The method provided by the invention is simple in process, good in flexibility and high in doping efficiency; the powder material which is high in doping uniformity and rich in defect can be obtained under a mild condition; and the application prospect of the method is very wide.

Description

technical field [0001] The invention belongs to the field of plasma doping, in particular to a plasma doping method for powder materials. [0002] technical background [0003] The existence of material defects will endow materials with novel functions, thereby improving the application value of materials. The introduction of impurities into materials is an important method of material modification. The existence of impurity defects can significantly improve the structural and electrical properties of materials, so that materials can exhibit unique properties. Modified materials are widely used in the research and application of catalysis, electrochemistry, aerospace and other fields. [0004] The doping method can be mainly divided into in-situ growth method and post-processing method. The in-situ growth method is a typical bottom-up doping method, that is, heteroatoms are doped into the structure of the material while the material is growing. The in-situ growth method can...

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Problems solved by technology

The heat treatment method mainly achieves doping through the diffusion of impurities at high temperature. The impurities diffuse or deposit on the surface of the acceptor material through the gas phase source or the doped compound, and the impurity concentration decreases monotonously from the surface to the body. The change of the phase will cause some adverse effects on the performance of the acceptor material. In addition, the equipment is prone to aging at high temperature, which will further increase the equipment investment

The ion implantation method is a method of injecting charged and energetic impurity particles into the acceptor material to achieve doping. The application of ion implantation doping in the field of microelectronics and photovoltaics is relatively mature, but the ion implanter is expensive. Difficult to generalize to other fields

[0005] In general, the in-situ growth method, the post-treatment method and the ion implantation method all have the problem of uneven doping, especially the in-situ growth method and the post-treatment method have a long doping period, usually more than 12 hours, and the efficiency is high. There are large limitations, and the cost of ion implantation is high, so it is difficult to widely popularize and use