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RRAM multiply-add operation circuit and method and model training method

An addition operation and circuit technology, applied in the field of RRAM multiply-add operation circuit, can solve the problem of power consumption of the operation array, and achieve the effect of reducing power consumption and reducing current fluctuation.

Pending Publication Date: 2022-03-29
SHANGHAI INTEGRATED CIRCUIT EQUIP & MATERIALS IND INNOVATION CENT CO +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Storage circuits such as RRAM use the input voltage to control the current and complete the multiplication and addition operation, but need a stable reference voltage to obtain a certain current. Usually, the operational amplifier is required to limit the current to reduce the current fluctuation to obtain the reference voltage, but the operational amplifier achieves a relatively high High frequency comes at the expense of higher current
At the same time, since the current sum is obtained by connecting the reference potential, unless the input voltage is equal to the reference voltage, the operation array will continue to consume power even if no related operations are required.

Method used

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  • RRAM multiply-add operation circuit and method and model training method
  • RRAM multiply-add operation circuit and method and model training method
  • RRAM multiply-add operation circuit and method and model training method

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Embodiment Construction

[0041] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are part of the present invention Examples, not all examples. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those skilled in the art to which the present invention belongs. As used herein, "comprising" and similar words mean that the elements or items appearing before the word include the elements or items listed after the word and their equivalents, without excluding other el...

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Abstract

The invention provides an RRAM multiply-add operation circuit and method and a model training method.The RRAM multiply-add operation circuit controls a switch unit, a current mirror unit, at least one phase inverter unit, at least one selection switch unit and at least one resistance unit, the phase inverter unit is used for conducting phase reversal processing on input voltage and generating phase reversal voltage, and the selection switch unit is used for selecting the phase reversal voltage; the resistor unit selects a resistor according to the anti-phase voltage, the control unit adjusts power consumption by controlling the resistor unit, and the current mirror unit is used for carrying out current limitation on the output end of the resistor unit to reduce current fluctuation. According to the invention, the power consumption of neural network current quantization multiply-add operation can be reduced.

Description

technical field [0001] The invention relates to the field of circuit technology, in particular to an RRAM multiply-add operation circuit, method and model training method. Background technique [0002] Memristor, the full name of memristor, is a resistive random access memory (RRAM) made of memristor, which is realized between a high resistance state and a low resistance state by the resistance of a non-conductive material under the action of an applied electric field. reversible conversion based non-volatile memory. It is a circuit device that represents the relationship between magnetic flux and charge. Memristor has the dimension of resistance, but unlike resistance, the resistance value of memristor is determined by the charge flowing through it. Therefore, by measuring the resistance value of the memristor, the amount of charge flowing through it can be known, thereby having the effect of memorizing charge. Due to the nonlinear nature of memristor, chaotic circuits c...

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Application Information

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IPC IPC(8): G06F7/544G06N3/063
CPCG06F7/5443G06N3/063
Inventor 余学儒李琛陈保安孙红霞傅豪
Owner SHANGHAI INTEGRATED CIRCUIT EQUIP & MATERIALS IND INNOVATION CENT CO