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Semiconductor device and method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as changes in electrical characteristics such as on-off characteristics without any consideration, and achieve the effect of stable electrical characteristics

Pending Publication Date: 2022-04-08
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in conventional semiconductor devices, crystal defects that increase the donor generation rate by proton implantation and become lifetime-suppressing factors are formed, and therefore there is a problem that problems caused by heat generation in the actual use of semiconductor devices Changes in electrical characteristics such as on-off characteristics caused by changes in crystal defects, without any consideration

Method used

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  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device
  • Semiconductor device and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] First, the configuration of the semiconductor device according to Embodiment 1 will be described. figure 1 It is a cross-sectional view showing the semiconductor device of the first embodiment.

[0035] In the following description, n and p represent the conductivity types of semiconductors, and in the present invention, the first conductivity type will be n-type and the second conductivity type will be p-type. In addition, n - Indicates that the impurity concentration is lower than n, n + Indicates that the impurity concentration is higher than n. Similarly, p - Indicates that the impurity concentration is lower than p, p + Indicates that the impurity concentration is higher than p.

[0036] exist figure 1 Among them, the semiconductor device 100 is a diode, for example, it is grown by FZ (Floating Zone) method or MCZ (Magnetic field applied Czochralski) method - Type of silicon semiconductor substrate formed. The semiconductor device 100 has a first main surfa...

Embodiment approach 2

[0092] Figure 18 It is a plan view showing the structure of the semiconductor device according to the second embodiment. in addition, Figure 19 and Figure 20 is a cross-sectional view showing the structure of the semiconductor device according to the second embodiment. Figure 19 yes Figure 18 A cross-sectional view of the shown semiconductor device 200 at the dotted line A-A, Figure 20 yes Figure 18 A cross-sectional view of the semiconductor device 200 at the dotted line B-B is shown. exist Figure 18 , marked with figure 1 Structures with the same reference numerals represent the same or corresponding structures, and descriptions thereof are omitted. The semiconductor device 200 of Embodiment 2 is an IGBT (Insulated Gate Bipolar Transistor).

[0093] Such as Figure 18 As shown, in the semiconductor device 200, the active trench gates 12 and the dummy trench gates 13 are arranged in stripes. The active trench gate 12 is configured such that a gate trench el...

Embodiment approach 3

[0110] Figure 21 It is a sectional view showing the semiconductor device in the third embodiment. exist Figure 21 , marked with figure 1 , Figure 19 or Figure 20 Structures with the same reference numerals represent the same or corresponding structures, and descriptions thereof are omitted. The case where the semiconductor device 100 is a diode in the first embodiment and the case where the semiconductor device 200 is an IGBT in the second embodiment have been described, but the semiconductor device 300 in the third embodiment has the IGBT region 40 provided in one semiconductor substrate. RC-IGBT (Reverse Conducting IGBT: Reverse Conducting IGBT) of the diode region 41 .

[0111] The semiconductor device 300 has one or more IGBT regions 40 and one diode region 41 in one semiconductor substrate (semiconductor chip), and the semiconductor device 300 has a structure in which the IGBT regions 40 and the diode regions 41 are alternately arranged in strips. The stripes ar...

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PUM

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Abstract

The invention relates to a semiconductor device and a manufacturing method of the semiconductor device. Provided is a semiconductor device in which electrical characteristics are stable even if crystal defects, which are life-suppressing elements, are formed in a semiconductor substrate. The semiconductor device is provided with: a first semiconductor layer (2) provided between a first main surface (1a) and an n-type drift layer (1); a first buffer layer (5) that is provided between the second main surface (1b) and the n-type drift layer and that has a hydrogen-induced donor; and a second semiconductor layer (3) provided between the second main surface (1b) and the first buffer layer (5), the first buffer layer (5) having a composite defect between interstitial carbon and interstitial oxygen, the density of which decreases from the second main surface (1b) toward the first main surface (1a) side.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] For semiconductor devices such as diodes and IGBTs (Insulated Gate Bipolar Transistor: insulated gate bipolar transistors), protons are implanted into the back side of the semiconductor substrate thinned by grinding to form hydrogen-induced donors. ) so that the depletion layer extending from the front side of the semiconductor substrate does not reach the back surface of the semiconductor substrate. In addition, the semiconductor substrate is irradiated with charged particles such as electrons, protons, or helium to form crystal defects in the semiconductor substrate as lifetime killers that shorten the recombination lifetime of carriers, thereby improving on-off characteristics. [0003] In the conventional method of manufacturing a semiconductor device, after crystal defects are formed by irradiating electro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/861H01L21/329
CPCH01L29/7397H01L29/8613H01L29/407H01L29/32H01L29/36H01L29/66136H01L29/0696H01L27/0727H01L29/66348H01L27/0635
Inventor 大塚翔瑠冈本隼人中村胜光田中香次西康一
Owner MITSUBISHI ELECTRIC CORP