Avalanche photodiode and manufacturing method thereof

Abstract

The invention provides an avalanche photodiode and a manufacturing method thereof, relates to the technical field of semiconductors, and is used for solving the technical problem that the avalanche photodiode is poor in performance. The avalanche photodiode includes: a substrate; the first diffusion regions are arranged on the first surface of the substrate at intervals, the first diffusion regions are electrically connected with the first electrode, the conduction types of the first diffusion regions and the substrate are different, and PN junctions are formed by the first diffusion regions and the substrate located between the adjacent first diffusion regions; the first heavily doped region is arranged on the second surface of the substrate, the second surface and the first surface are oppositely arranged, the first heavily doped region is located among the multiple first diffusion regions, the conduction type of the first heavily doped region is the same as that of the substrate, and the first heavily doped region is electrically connected with the second electrode. The length and the thickness of the PN junction depletion region can be adjusted by adjusting the depth of the first diffusion regions and the distance between the adjacent first diffusion regions, so that the size of the depletion region is increased, and the performance of the avalanche photodiode is further improved.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to an avalanche photodiode and a manufacturing method thereof. Background technique [0002] With the development of technologies and markets such as the Internet of Things, Internet of Vehicles, and autonomous driving, avalanche optoelectronic devices, especially avalanche photodiodes, such as Single Photon Avalanche Diodes (Single Photon Avalanche Diode, SPAD for short), due to their small size, high sensitivity, The advantages of fast response have gradually become the focus of research. [0003] Avalanche photodiodes generally include a PN junction, and the contacting regions of the PN junction form a depletion region. After a reverse bias is applied to the PN junction, the incident light is absorbed by the depletion region to excite electron-hole pairs, and the electron-hole pairs collide with the lattice atoms under the action of an external electric field to...

AI Technical Summary

Problems solved by technology

However, the depletion region of the avalanche photodiode is difficult to further thicken, and the performance of the avalanche photodiode is poor

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