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High-voltage integrated circuit and control method thereof

A high-voltage integrated circuit, high-side technology, applied in the field of high-voltage integrated circuits and its control, can solve problems such as inaccurate control signals

Active Publication Date: 2022-04-12
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned defects, an object of the present invention is to propose a high-voltage integrated circuit, which solves the problem of inaccurate control signals generated by the RS flip-flop of the existing high-voltage integrated circuit
[0005] In view of the above defects, another object of the present invention is to propose a control method for high-voltage integrated circuits, which solves the problem of inaccurate control signals generated by the RS flip-flops of existing high-voltage integrated circuits

Method used

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  • High-voltage integrated circuit and control method thereof
  • High-voltage integrated circuit and control method thereof
  • High-voltage integrated circuit and control method thereof

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Embodiment Construction

[0037] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0038] Combine below Figure 3 to Figure 10 , which describes a high-voltage integrated circuit according to an embodiment of the present invention, including an MCU processor 1, a delay pulse unit 2, a voltage detection unit 4, and a high-side drive unit 5;

[0039] Described delay pulse unit 2 comprises shift register 21, the first single pulse GEN22, the second single pulse GEN23, the first OR gate 24 and the second OR gate 25; Described shift register 21 is a kind of A flip-flop-based device that works under pulses, data is input in...

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Abstract

The invention discloses a high-voltage integrated circuit, and belongs to the technical field of semiconductors, the rising edge output end of a first monopulse GEN is electrically connected with the input end of a first OR gate, and the falling edge output end of the first monopulse GEN is electrically connected with the input end of a second OR gate; a reset pin of the shift register is electrically connected with a reset signal output end of the MCU processor, and a clock pin of the shift register is electrically connected with a PWM (Pulse Width Modulation) output end of the MCU processor; the output end of the shift register is electrically connected with the input end of the second single pulse GEN, the rising edge output end of the second single pulse GEN is electrically connected with the input end of the first OR gate, and the falling edge output end of the second single pulse GEN is electrically connected with the input end of the second OR gate. The invention further discloses a control method of the high-voltage integrated circuit. According to the high-voltage integrated circuit and the control method thereof, the problem that the control signal generated by the RS trigger is inaccurate is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-voltage integrated circuit and a control method thereof. Background technique [0002] High-voltage integrated circuits, or HVICs, are integrated circuit products that convert MCU signals into signals that drive IGBT tubes or MOS tubes. Such as figure 1 As shown, HVIC integrates PMOS tubes, NMOS tubes, transistors, diodes, voltage regulator tubes, resistors and capacitors together to form Schmitt, low-voltage LEVELSHIFT, high-voltage LEVELSHIFT, pulse generation circuit, delay circuit, filter circuit, overcurrent Protection circuit and overheating protection circuit, undervoltage protection circuit and bootstrap circuit and other circuits. [0003] The high-side driving unit 5 of the existing HVIC includes an N-channel DMOS transistor Q1, an N-channel DMOS transistor Q2, and an RS flip-flop 51. The single-pulse GEN generates pulses according to the HIN signal inpu...

Claims

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Application Information

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IPC IPC(8): H03K17/567H03K7/08H03K17/687
CPCH03K7/08H03K17/567H03K17/687
Inventor 冯宇翔李斌谢荣才
Owner SOUTH CHINA UNIV OF TECH
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