Airflow adjusting device and method and plasma processing device using airflow adjusting device
A plasma and processing device technology, applied in the field of airflow adjustment devices, can solve the problems of uneven airflow distribution, affecting product yield, uneven pumping, etc., so as to avoid uneven pumping, ensure normal exhaust function, and improve The effect of eclipse equalization
Active Publication Date: 2022-04-29
ADVANCED MICRO FAB EQUIP INC CHINA
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On the other hand, the pump generally uses a pendulum valve to control the opening, and the opening of the valve will always be biased to one side. This bias will also cause uneven pumping, so that the air flow below the plasma confinement ring 33 will appear unevenly distributed.
The gas flow edge distribution below the plasma confinement ring 33 will be directly mapped to the gas flow in the plasma region above it, and this asymmetric gas flow distribution will cause the etching edge problem in sensitive processes, affecting product quality. Rate
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[0044] based on the following Figure 2 to Figure 8 , specifically explain the preferred embodiment of the present invention.
[0045] Such as figure 2As shown, the present invention provides a plasma processing device, comprising a vacuum reaction chamber 1, the vacuum reaction chamber 1 is connected to the intake device 2, the bottom of the vacuum reaction chamber 1 is connected to the exhaust device 3 through the exhaust port 9, and the vacuum reaction chamber 1 is provided with a base 4 for supporting the substrate, an electrostatic chuck 5 is arranged on the base 4, a substrate 6 is placed on the electrostatic chuck 5, and a plasma region 10 is above the base 4. A plasma confinement ring 7 is arranged around the periphery of the base 4, and an exhaust area is located below the plasma confinement ring 7. Several gas channels are arranged on the plasma confinement ring 7 for discharging gas to the exhaust area. In the exhaust area below the plasma confinement ring 7, an ...
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The invention discloses a plasma processing device and an airflow adjusting device and an airflow adjusting method used for the plasma processing device, the plasma processing device comprises a vacuum reaction cavity connected with an air inlet device and an air exhaust device, a base used for supporting a substrate is arranged in the vacuum reaction cavity, a plasma area is arranged above the base, and the airflow adjusting device is arranged in the plasma area. A plasma confinement ring with a gas channel is arranged around the periphery of a base, an airflow adjusting device with a gas channel is additionally arranged in an exhaust area below the plasma confinement ring, and airflow distribution in the exhaust area is adjusted by adjusting the opening degree of the gas channel on the airflow adjusting device. Therefore, uniform distribution of air flow in the plasma area above the base is realized. According to the invention, uniform distribution of air flow in a plasma area is realized, etching uniformity is ensured, the product yield is ensured, and the equipment cost is reduced at the same time.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, and in particular to an airflow adjustment device, an airflow adjustment method, and a plasma processing device using the airflow adjustment device. Background technique [0002] In the current plasma processing apparatus, there is a problem of non-uniform gas flow distribution. Such as figure 1 As shown, a pedestal 22 for supporting the substrate is arranged inside the vacuum reaction chamber 11 , the plasma region is above the pedestal, and the vacuum reaction chamber 11 is connected to a suction pump 55 through a suction port 44 . On the one hand, considering the central symmetry of the radio frequency, it is preferable to place the base 22 as the lower electrode of the radio frequency in the center of the vacuum reaction chamber 11, and a plasma confinement ring 33 is arranged around the periphery of the base 22, thus resulting in a vacuum reaction The gas extraction ports 44 prov...
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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32834H01J37/32449H01L21/67069H01J2237/3343
Inventor 吴磊张一川刘身健黄允文王凯麟
Owner ADVANCED MICRO FAB EQUIP INC CHINA