Silicon-based alloy material, preparation method of silicon-based alloy material, high-resistance thin film and preparation method of high-resistance thin film
An alloy material and silicon-based technology, applied in the field of electronic display devices, can solve the problems affecting the touch effect and touch sensitivity, etc., and achieve the effect of good anti-static ability
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[0025] The invention provides a method for preparing a silicon-based alloy material, comprising the following steps:
[0026] A) performing heat treatment deoxidation on the silicon-based alloy in the blank container to obtain the rough blank of the alloy material;
[0027] The silicon-based alloy includes 60-99wt% silicon and 1-40wt% alloy metal, and the alloy metal is one or more of aluminum, zinc-aluminum, antimony, chromium and nickel;
[0028] The temperature of the heat treatment is 1100-1350°C; the time of the heat treatment is 60-120min;
[0029] B) performing cold isostatic pressing and hot isostatic pressing on the rough billet of the alloy material in sequence to obtain a silicon-based alloy material.
[0030] In the present invention, the composition of the silicon-based alloy is 60-99% silicon and 1-40% alloy metal, and the alloy metal is preferably one or more of aluminum, zinc-aluminum, antimony, chromium and nickel. One, the mass content of silicon in the sil...
Embodiment 1
[0065] Mix 750g of silicon with 250g of aluminum, zinc-aluminum, antimony, chromium and nickel, and centrifuge at a speed of 2200 rpm for 70 minutes to obtain a mixed powder.
[0066] Pour the mixed powder into a rough container, and treat it at 1200° C. for 70 minutes under an oxygen atmosphere to obtain a high-temperature deoxidized powder.
[0067] The high-temperature deoxidized powder is subjected to cold isostatic pressing at a pressure of 200 MPa and a holding time of 10 minutes, and the obtained rough body has a relative density of 40%.
[0068] Put the preformed material rough blank into a container of corresponding size, seal the container with the rough blank, and vacuum the pressure to 5pa. Put the above container into a hot isostatic pressing furnace, and carry out hot isostatic pressing treatment at 1000 ° C, the holding time is 2 hours, and the pressure of argon is 140 MPa to obtain SiO x : AL, SiO x :ZnO:SiO x :Sb 2 o x , SiO x :Cr 2 o x , SiO x :NiO ...
Embodiment 2
[0073] Mix 800g of silicon with 200g of aluminum, zinc-aluminum, antimony, chromium and nickel, and centrifuge at a speed of 2500 rpm for 75 minutes to obtain a mixed powder.
[0074] Pour the mixed powder into a rough container, and treat it at 1250° C. for 75 minutes under an oxygen atmosphere to obtain a high-temperature deoxidized powder.
[0075] The high-temperature deoxidized powder is subjected to cold isostatic pressing at a pressure of 250 MPa and a holding time of 15 minutes to obtain a rough body with a relative density of 50%.
[0076] Put the preformed material rough blank into a container of corresponding size, seal the container with the rough blank, and vacuumize it to a pressure of 7pa. Put the above container into a hot isostatic pressing furnace, and carry out hot isostatic pressing treatment at 1100 ° C, the holding time is 3 hours, and the pressure of argon is 160 MPa to obtain SiO x : AL, SiO x :ZnO:SiO x :Sb 2 o x , SiO x :Cr 2 o x , SiO x :NiO...
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