Optical phase shifter and manufacturing method thereof

Abstract

An optical phase shifter is provided. The optical phase shifter includes a substrate, a first waveguide layer, a second waveguide layer, a metal layer, and a third waveguide layer. The first waveguide layer is over the substrate. The second waveguide layer is located on the first waveguide layer. The metal layer is over the second waveguide layer and is configured to receive a control voltage. The third waveguide layer is located on the metal layer. A waveguide structure jointly formed by the second waveguide layer and the third waveguide layer receives light coupled out of the first waveguide layer. The light forms a light field limitation in the third waveguide layer. The third waveguide layer has a refractive index that varies with the control voltage to modulate the phase of the light.

Description

technical field [0001] The present disclosure relates to the technical field of integrated photonics, in particular to the technical field of optical phased array, in particular to an optical phase shifter and a manufacturing method thereof. Background technique [0002] Optical phase shifter is the core device of optical phased array. With the vigorous development of silicon-based integrated optical phased array technology, the array scale of high-performance optical phased array has been expanded to have hundreds to thousands of channels. Optical phase shifters with ultra-low insertion loss and low power consumption can greatly increase the output optical power of optical phased arrays and reduce total drive power consumption, so they have become the core technology for the industrialization of silicon-based integrated optical phased arrays. [0003] At present, the commonly used phase shifters for silicon-based platforms can be divided into two types: thermally adjustabl...

AI Technical Summary

Problems solved by technology

Although the power consumption of the PN anti-offset phase device is very low, the area where the light field passes through the carrier distribution will introduce a large insertion loss

These two phase shifters may be difficult to apply to ultra-large-scale integration due to their respective shortcomings in power consumption or insertion loss, and thus may be difficult to meet the demand for high-performance silicon-based integrated optical phased arrays

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