Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof, and relates to the technical field of semiconductors. The forming method comprises the following steps: providing a substrate, wherein the substrate comprises a first region and a second region; forming an insulating layer on the substrate; part of the insulating layer located in the second area is etched, the insulating layer on the first area forms a first insulating layer, the remaining insulating layer on the second area forms a second insulating layer, and the surface of the side, away from the substrate, of the second insulating layer is lower than the surface of the side, away from the substrate, of the first insulating layer; forming a first barrier layer covering the first insulating layer and a second barrier layer covering the second insulating layer, wherein the thickness of the second barrier layer is greater than that of the first barrier layer; etching the first barrier layer, a part of the second barrier layer and the first insulating layer to form a through hole in the first insulating layer, and forming a hole section in the second barrier layer; and removing the first barrier layer and the second barrier layer. According to the forming method, defects can be prevented from being formed in the edge area of the substrate, and the yield of the semiconductor structure is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] Dynamic Random Access Memory (DRAM) is widely used in mobile devices such as mobile phones and tablet computers due to its advantages of small size, high degree of integration and fast transmission speed. As the core component of DRAM, capacitor is mainly used to store charge. [0003] Usually, in the process of manufacturing capacitors, limited by the etching process, in the process of forming holes in the capacitor structure in the edge region of the semiconductor substrate, since the film layer is not etched to expose the substrate, the subsequent deposition of capacitors into the holes The material will cause the capacitive material to peel off and form defects, which will affect the yield of the semiconductor structure. [0004] It should be noted that the inform...

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Problems solved by technology

[0003] Usually, in the process of manufacturing capacitors, limited by the etching process, in the process of forming holes in the capacitor structure in the edge region of the semiconductor substrate, since the film layer is not etched to expose the substrate, the subsequent deposition of capacitors into the holes After the material is removed, the capacitive material will peel off and form defects, which will affect the yield of the semiconductor structure

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