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Diffusion method of imbricated solar cell and imbricated solar cell

A technology of a solar cell and a diffusion method is applied to the diffusion method of a shingled solar cell and the field of a shingled solar cell, and achieves the effects of improving the junction depth and breakdown voltage of a PN junction and improving the photoelectric conversion efficiency.

Pending Publication Date: 2022-05-13
TIANJIN AIKO SOLAR ENERGY TECH CO LTD +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a method for diffusion of shingled solar cells and shingled solar cells, aiming to solve the problem of how to diffuse silicon wafers to improve the PN junction depth and breakdown voltage of shingled solar cells

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  • Diffusion method of imbricated solar cell and imbricated solar cell
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  • Diffusion method of imbricated solar cell and imbricated solar cell

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Embodiment 1

[0039] In the diffusion method for shingled solar cells according to the embodiment of the present application, when the resistivity of the silicon wafer is greater than or equal to the preset resistivity threshold value, the silicon wafer after the phosphorus deposition treatment is subjected to a first preset number of advance treatments; When the resistivity of the silicon wafer is less than the preset resistivity threshold, the silicon wafer after the phosphorus deposition process is subjected to a second preset number of advance treatments.

[0040] The diffusion method of the shingled solar cell in the embodiment of the present application, because silicon wafers with different resistivities are subjected to different times of advancing treatment, thereby performing selective diffusion, it is possible to improve the performance of the shingled solar cell made of silicon wafers in a targeted manner. The PN junction depth and breakdown voltage improve the photoelectric conv...

Embodiment 2

[0079] In some optional embodiments, the range of the preset resistivity threshold is 0.6Ω·cm-0.8Ω·cm. For example, it is 0.6Ω·cm, 0.62Ω·cm, 0.65Ω·cm, 0.68Ω·cm, 0.7Ω·cm, 0.73Ω·cm, 0.75Ω·cm, 0.79Ω·cm, 0.8Ω·cm.

[0080] In this way, the preset resistivity threshold is in an appropriate range, and it is difficult to carry out targeted push processing on silicon wafers with different resistivities caused by the preset resistivity threshold being too low or too high, thereby avoiding the poor effect of the push processing, It is beneficial to improve the PN junction depth and breakdown voltage of shingled solar cells made of silicon wafers in a targeted manner.

[0081] For other explanations and illustrations about this embodiment, reference may be made to other parts of this document, and details are not repeated here to avoid redundancy.

Embodiment 3

[0083] In some optional embodiments, the preset resistivity threshold is 0.7Ω·cm.

[0084] In this way, the silicon wafers with a resistivity greater than or equal to 0.7Ω·cm are subjected to a first preset number of advance treatments, and the silicon wafers with a resistivity less than 0.7Ω·cm are subjected to a second preset number of advance treatments. The classification is more accurate, so that silicon wafers can be targeted for advancing treatment, so that the effect of advancing treatment is better, which is conducive to targeted improvement of the PN junction depth and breakdown voltage of shingled solar cells made of silicon wafers .

[0085] For other explanations and illustrations about this embodiment, reference may be made to other parts of this document, and details are not repeated here to avoid redundancy.

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Abstract

The invention is suitable for the technical field of solar cells, and provides a diffusion method of an imbricated solar cell and the imbricated solar cell. The diffusion method of the imbricated solar cell comprises the following steps: under the condition that the resistivity of a silicon wafer is greater than or equal to a preset resistivity threshold value, carrying out first preset times of propulsion treatment on the silicon wafer after phosphorus deposition treatment; and under the condition that the resistivity of the silicon wafer is smaller than the preset resistivity threshold value, carrying out second preset times of propulsion treatment on the silicon wafer after phosphorus deposition treatment. Therefore, the PN junction depth and the breakdown voltage of the imbricated solar cell made of the silicon wafer can be improved in a targeted manner, and the photoelectric conversion efficiency of the imbricated solar cell is improved.

Description

technical field [0001] The application belongs to the technical field of solar cells, and in particular relates to a diffusion method for shingled solar cells and the shingled solar cells. Background technique [0002] The shingled solar cell module is to cut a single large-area cell into multiple small-area cells, and then bond the edge positive electrode of each small cell with the edge back electrode of the adjacent small cell to form a string. This typesetting method avoids the blank gap between the cells, and improves the packaging density and power density of the module. The working current of the shingled solar cell module is only one-Nth of that before cutting, but the working voltage increases to N times before cutting. The increase in working voltage brings the risk of cell PN junction breakdown or increased leakage current. . [0003] The range of resistivity of the silicon wafers used in the shingled solar cells in the related art is too wide, resulting in insu...

Claims

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Application Information

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IPC IPC(8): H01L21/223H01L31/18
CPCH01L21/223H01L31/1804
Inventor 庞瑞卿吕闯李吉时宝林纲正陈刚
Owner TIANJIN AIKO SOLAR ENERGY TECH CO LTD