Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for improving performance of doped hafnium oxide film ferroelectric device

A technology of hafnium oxide and electrical devices, which is applied in the field of improving the performance of doped hafnium oxide thin film ferroelectric devices, can solve the problems of poor imprint voltage tolerance and affecting the performance of ferroelectric devices, and achieve the effect of improving performance and avoiding damage

Pending Publication Date: 2022-05-13
BEIJING SUPERSTRING ACAD OF MEMORY TECH +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when PVD is used to grow the TiN upper electrode, many defects will be generated on the upper surface of the doped hafnium oxide film due to the particle bombardment effect during sputtering. These defects will seriously affect the performance of ferroelectric devices, such as Imprint or voltage resistance. Poor acceptability and other issues

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving performance of doped hafnium oxide film ferroelectric device
  • Method for improving performance of doped hafnium oxide film ferroelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0016] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and in practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art should Regions / la...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for improving the performance of a doped hafnium oxide film ferroelectric device. The invention discloses a method for improving the performance of a doped hafnium oxide film ferroelectric device. The method comprises the following steps: growing a bottom electrode on a semiconductor substrate; growing a doped hafnium oxide thin film on the bottom electrode; growing a layer of titanium nitride on the surface of the doped hafnium oxide film by using an ALD method; and growing residual titanium nitride by using a PVD (Physical Vapor Deposition) method to form an upper electrode. According to the invention, the upper surface of the doped hafnium oxide film can be optimized, so that the remanent polarization and voltage tolerance of the ferroelectric device based on the doped hafnium oxide film are improved.

Description

technical field [0001] The invention relates to the field of semiconductor production technology, in particular to a method for improving the performance of a doped hafnium oxide thin film ferroelectric device. Background technique [0002] Hafnium oxide is a high-K oxide commonly used in integrated circuit CMOS technology. In recent years, it has been found that doped hafnium oxide also has ferroelectricity under certain conditions, so it is widely used in the research of ferroelectric memory devices. In the electrode-ferroelectric layer-electrode (MFM) structure, titanium nitride (TiN) is a commonly used electrode material. A common method for preparing the TiN top electrode in contact with the doped hafnium oxide film is PVD. However, when the TiN upper electrode is grown by PVD, many defects will occur on the upper surface of the doped hafnium oxide film due to the particle bombardment effect during sputtering. These defects will seriously affect the performance of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L49/02H01L27/11502
CPCH01L28/40H10B53/00
Inventor 罗庆王博平
Owner BEIJING SUPERSTRING ACAD OF MEMORY TECH