Semiconductor device and forming method thereof

Abstract

The invention discloses a semiconductor device and a forming method thereof, the semiconductor device comprises a substrate, a plurality of first patterns and a plurality of second patterns are arranged on the substrate, each first pattern comprises a first main body part and a first extension part which are connected with each other, each second pattern comprises a second main body part and a second extension part which are connected with each other, and each of the first main body part and the second main body part comprises at least one arc-shaped pattern and at least one contact structure which is overlapped with the first pattern or the second pattern. Therefore, the invention can utilize a self-alignment double patterning manufacturing process to be matched with the patterning mask layer to form a specific pattern which is relatively dense in layout and relatively small in size, so as to facilitate the proceeding of a subsequent component manufacturing process.

Description

technical field [0001] The present invention relates to a semiconductor device and its forming method, in particular to a semiconductor storage device and its forming method. Background technique [0002] In the semiconductor manufacturing process, the manufacture of some microstructures requires the use of photolithography and etching in appropriate substrates or material layers such as semiconductor substrates / film layers, dielectric material layers, or metal material layers to form microstructures with Tiny patterns of precise dimensions. For this purpose, in conventional semiconductor technology, a mask layer (masklayer) is formed on top of the target material layer, so that these tiny patterns are first formed / defined in the mask layer, and then the patterns are transferred to the target film layer. Generally speaking, the mask layer is, for example, a patterned photoresist layer formed by a photolithography process, and / or a patterned mask layer formed using the patt...

AI Technical Summary

Problems solved by technology

[0003] With the complexity of integrated circuits, the size of these tiny patterns is continuously reduced and the structure is constantly changing. Therefore, the equipment used to generate feature patterns must meet the strict requirements of manufacturing process resolution and overlay accuracy. , the single patterning method can no longer meet the resolution requirements or manufacturing process requirements for manufacturing micro-linewidth patterns

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