Three-dimensional memory and forming method thereof

A three-dimensional, phase-change storage technology, used in semiconductor devices, electrical solid-state devices, climate sustainability, etc., can solve the problems of high program current, large silicon area, large cell size, etc., to reduce manufacturing costs and increase silicon area. , the effect of small scalability

Pending Publication Date: 2022-05-17
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the current embedded phase change memory technology is based on two-dimensional technology, the cell size is large, high program current is required, it is difficult to achieve high embedded PCM capacity, and it takes up a large silicon area, resulting in a larger chip size and cost

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  • Three-dimensional memory and forming method thereof
  • Three-dimensional memory and forming method thereof
  • Three-dimensional memory and forming method thereof

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Embodiment Construction

[0030]Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided for a more thorough understanding of the present application and for fully conveying the scope disclosed in the present application to those skilled in the art.

[0031] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features know...

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Abstract

The embodiment of the invention provides a three-dimensional memory and a forming method thereof, and the method comprises the steps: providing a semiconductor front-end device which is formed through employing a preset previous process; the semiconductor front-end device comprises a peripheral region and an array region; and respectively forming a peripheral region device in the peripheral region of the semiconductor front-end device and forming an embedded phase change memory cell array in the array region by adopting a subsequent process.

Description

technical field [0001] The embodiments of the present application relate to the field of semiconductors, and relate to, but are not limited to, a three-dimensional memory and a method for forming the same. Background technique [0002] Flash memory (Flash) is a new type of storage device with fast read and write speed, low power consumption, high temperature resistance and no noise. It has become the mainstream non-volatile memory technology (non-volatile memory, NVM) and is widely used in data centers. , personal computers, mobile phones, smart terminals, consumer electronics and other fields. Embedded flash memory (eFlash) is a memory module used to store information in system semiconductors such as microelectronics units (MCUs) and SoCs for small electronics such as IoT devices. With the continuous evolution of process nodes, the 28nm / 22nm silicon lithography node will be the last cost-effective technology node of eFlash. After that, the effect of size reduction cannot c...

Claims

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Application Information

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IPC IPC(8): H01L27/24
CPCH10B63/84Y02D10/00
Inventor 刘峻鞠韶复
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
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