Controller and operating method thereof

Abstract

There is provided a controller for controlling a memory device including a memory cell, the controller including: a memory suitable for storing offset level information, the offset level information being determined based on a sample read level according to a characteristic of the memory cell and Gaussian modeling of the memory cell; and a processor suitable for generating an estimated read level based on Gaussian modeling and data read from the memory cell, and applying a compensated read voltage to control the memory device to perform a read operation of the memory cell, where the compensated read voltage is generated by applying offset level information to the estimated read level.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application No. 10-2020-0159916 filed on November 25, 2020, which is hereby incorporated by reference in its entirety. technical field [0003] Embodiments relate to a controller for controlling a memory device and an operating method thereof. Background technique [0004] In general, semiconductor memory devices are classified into volatile memory devices such as dynamic random access memory (DRAM) and static RAM (SRAM), and volatile memory devices such as read only memory (ROM), mask ROM (MROM), programmable ROM ( PROM), erasable PROM (EPROM), electrical EPROM (EEPROM), ferroelectric RAM (FRAM), phase change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM) and flash memory volatile memory device. [0005] Volatile memory devices lose their stored data when power supply is interrupted, while non-volatile memory devices retain their stored data even when power su...

AI Technical Summary

Problems solved by technology

This charge loss can be accelerated when the tunnel oxide film deteriorates due to iterative programming and erasing operations

The loss of charge causes the threshold voltage of the memory cell to decrease

exist figure 2 In the example shown, the threshold voltage distribution may be shifted to the left due to charge loss

[0014] Further, program disturb, erase disturb and / or background pattern dependency (back pattern dependency) may lead to an increase in threshold voltage

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