Semiconductor device and forming method

A semiconductor and device technology, applied in the field of semiconductor devices and formation, can solve the problems of high material cost, wafer processing cost, material loss, etc., and achieve the effect of reducing the risk of fragmentation, reducing material cost, and not easy to break

Active Publication Date: 2022-05-27
广东芯粤能半导体有限公司
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present application provides a semiconductor device and a forming method to solve the problem of high material cost and wafer processing cost in the existing semiconductor device due to the material loss caused by the thicker substrate material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and forming method
  • Semiconductor device and forming method
  • Semiconductor device and forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of this application. In the case of no conflict, the following various embodiments and their technical features can be combined with each other.

[0028] Please refer to figure 1 , which is a schematic flowchart of a method for forming a semiconductor device according to an embodiment of the present application.

[0029] The method for forming a semiconductor device in this embodiment includes the following steps:

[0030] Step S101 , providing a semiconductor substrate, the thickness of the semiconductor substrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a semiconductor device and a forming method, and the method comprises the steps: providing a semiconductor substrate, the thickness of the semiconductor substrate is a first thickness, and the semiconductor substrate is provided with a first surface and a second surface which are opposite to each other; forming a supporting layer on the first surface of the semiconductor substrate, wherein the melting point of the supporting layer is greater than a first temperature threshold value; forming a device layer on the second surface of the semiconductor substrate, wherein the first temperature threshold is greater than or equal to the process temperature in the forming process of the device layer; and removing the supporting layer. The supporting layer is formed on the first surface of the semiconductor substrate, and the supporting layer plays a role in bearing stress, so that the substrate can be relatively thin, the material cost and the wafer processing cost are reduced, the physical impact resistance of a wafer is improved, and the fragment risk is reduced; in addition, the melting point of the supporting layer is greater than the first temperature threshold value, so that the supporting layer can be prevented from melting and losing the supporting effect when the device layer is subsequently formed.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor device and a method for forming the same. Background technique [0002] When preparing substrate materials for semiconductor devices, in order to avoid debris during wafer processing, the substrate material is usually prepared thicker, and the thickness of the substrate material is generally greater than 300 μm, thereby greatly improving the physical impact resistance of the substrate material. , to avoid fragmentation. [0003] However, the thicker substrate material will cause material loss, resulting in higher material cost and wafer processing cost. SUMMARY OF THE INVENTION [0004] In view of this, the present application provides a semiconductor device and a method for forming the same, so as to solve the problem of high material cost and wafer processing cost caused by material loss caused by thick substrate material in the existing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/6834Y02P70/50
Inventor 魏峰相奇徐伟
Owner 广东芯粤能半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap