Semiconductor device and forming method

Abstract

The invention discloses a semiconductor device and a forming method, and the method comprises the steps: providing a semiconductor substrate, the thickness of the semiconductor substrate is a first thickness, and the semiconductor substrate is provided with a first surface and a second surface which are opposite to each other; forming a supporting layer on the first surface of the semiconductor substrate, wherein the melting point of the supporting layer is greater than a first temperature threshold value; forming a device layer on the second surface of the semiconductor substrate, wherein the first temperature threshold is greater than or equal to the process temperature in the forming process of the device layer; and removing the supporting layer. The supporting layer is formed on the first surface of the semiconductor substrate, and the supporting layer plays a role in bearing stress, so that the substrate can be relatively thin, the material cost and the wafer processing cost are reduced, the physical impact resistance of a wafer is improved, and the fragment risk is reduced; in addition, the melting point of the supporting layer is greater than the first temperature threshold value, so that the supporting layer can be prevented from melting and losing the supporting effect when the device layer is subsequently formed.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a semiconductor device and a method for forming the same. Background technique [0002] When preparing substrate materials for semiconductor devices, in order to avoid debris during wafer processing, the substrate material is usually prepared thicker, and the thickness of the substrate material is generally greater than 300 μm, thereby greatly improving the physical impact resistance of the substrate material. , to avoid fragmentation. [0003] However, the thicker substrate material will cause material loss, resulting in higher material cost and wafer processing cost. SUMMARY OF THE INVENTION [0004] In view of this, the present application provides a semiconductor device and a method for forming the same, so as to solve the problem of high material cost and wafer processing cost caused by material loss caused by thick substrate material in the existing...

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Problems solved by technology

[0004] In view of this, the present application provides a semiconductor device and a forming method to solve the problem of high material cost and wafer processing cost in the existing semiconductor device due to the material loss caused by the thicker substrate material

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