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Bias voltage regulation-based design method of Weel semimetal material device

A Weyl semi-metal and semi-metal material technology is applied in the field of Weyl semi-metal device design based on bias voltage regulation, which can solve the problems of small photocurrent and inability to achieve industrial production, achieve high efficiency, reduce research costs, Calculate the exact effect

Pending Publication Date: 2022-05-31
HANGZHOU DIANZI UNIV
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Problems solved by technology

[0003] In optoelectronic devices of low-dimensional materials, optoelectronic devices can directly convert photon energy into electrical signals, and play an important role as a bridge between electronics and photonics. The current is too small to meet the needs of industrial production. Therefore, increasing the photocurrent of Weyl semimetal devices through appropriate control methods to achieve better photoelectric performance has become a key issue that needs to be solved urgently.

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  • Bias voltage regulation-based design method of Weel semimetal material device
  • Bias voltage regulation-based design method of Weel semimetal material device
  • Bias voltage regulation-based design method of Weel semimetal material device

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[0036] In order to make the purpose, implementation, technical steps, and advantages of the embodiments of the present invention clearer, the present invention will be further described in detail below in conjunction with the drawings and specific implementations of the embodiments of the present invention. The described embodiments are only some, not all, embodiments of the present invention.

[0037] The present invention will be further clearly and completely described below in conjunction with the drawings and specific implementation methods of the embodiments of the present invention.

[0038] Refer to attached figure 1 As shown, the present invention proposes a Weyl semimetal device design method based on bias regulation, and the specific implementation steps are as follows:

[0039] S1. Construct Weyl semimetal device model

[0040] The invention is based on the first-principle research of the density functional theory, and models the Weyl semimetal material and devic...

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Abstract

The invention discloses a design method of a Weel semimetal material device based on bias regulation and control. According to the invention, the correlation between the photoelectric property and the bias voltage of the Weel semimetal material is disclosed, the energy band diagram, the state density diagram and the photocurrent of the Weel semimetal material are calculated through the first principle, and the relationship between the photoelectric property and the electron energy band transition of the Weel semimetal material device is indirectly explained; the photocurrent of the device under different bias voltages is visually displayed, and a theoretical basis is laid for bias voltage regulation and control means in the related field of device application.

Description

technical field [0001] The invention relates to the field of two-dimensional material analysis and characterization, in particular to a Weyl semi-metal material device design method based on bias voltage regulation. Background technique [0002] In recent years, following the rise of layered graphene, researchers have devoted themselves to the exploration of two-dimensional layered materials. Weyl semimetals are another research hotspot after graphene and topological insulators. Compared with the latter, the unique three-dimensional gapless linear dispersion band structure of Weyl semimetals makes it have many peculiar properties, such as: chirality Anomalies, chiral magnetic effects, anti-weak localization, chiral Landau levels, and negative magnetoresistance effects, etc. Weyl semimetals have broadband photon absorption capability, high absorption coefficient, and high carrier mobility (equal to graphene at room temperature), which makes Weyl semimetals widely used in opt...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20
CPCG06F30/20Y02E60/00
Inventor 丁颖李源王新茹程鑫雨廖烈鸿张嘉颜
Owner HANGZHOU DIANZI UNIV