High-voltage element of switching type power supply circuit and manufacturing method of high-voltage element

Abstract

The invention provides a high-voltage element of a switching type power supply circuit and a manufacturing method of the high-voltage element. The high-voltage element is used in a power level circuit of a switching type power supply circuit to serve as an upper bridge switch, and comprises at least one laterally diffused metal oxide semiconductor element, a second conductivity type isolation area and at least one Schottky barrier diode. The laterally diffused metal oxide semiconductor element includes: a well region formed in a semiconductor layer; a body region; a gate electrode; and a source electrode and a drain electrode. The second conductive type isolation region is in the semiconductor layer and is electrically connected with the body region. The Schottky barrier diode includes: a Schottky metal layer formed on the semiconductor layer; and a Schottky semiconductor layer formed in the semiconductor layer, the Schottky semiconductor layer forming a Schottky contact with the Schottky metal layer, and the Schottky semiconductor layer being adjacent to the second conductivity type isolation region.

Description

technical field [0001] The present invention relates to a high-voltage component of a switching power supply circuit and a manufacturing method thereof, in particular to a high-voltage component of a switching power supply circuit capable of preventing leakage current and a manufacturing method thereof. Background technique [0002] FIG. 1 shows a schematic circuit diagram of a typical boost power stage circuit used as a power stage circuit in a switching power supply circuit. As shown in FIG. 1 , when the current Ibd flows from the phase node LX to the output voltage Vout at the delay time (deadtime), it will flow through the parasitic diode to generate a leakage current Ib, which in turn causes the parasitic PNP transistor to be turned on, thereby generating a leakage current Ic , the leakage current Ic will flow from the phase node LX to the ground potential GND, and on the element, it will flow from the P-type isolation ring and the N-type isolation ring of the element t...

AI Technical Summary

Problems solved by technology

As shown in Figure 1, when the current Ibd flows from the phase node LX to the output voltage Vout at the dead time, it will flow through the parasitic diode, generating a leakage current Ib, which in turn causes the parasitic PNP transistor to be turned on, resulting in a leakage current Ic , the leakage current Ic will flow from the phase node LX to the ground potential GND, and on the component, it will flow from the P-type isolation ring and N-type isolation ring of the component to the P-type substrate, which will cause power loss

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