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MOM capacitor

A capacitor and electrode technology, applied in capacitors, electrical solid devices, circuits, etc., can solve the problems of reducing the size of capacitors and bulky capacitor arrays, and achieve the effects of simple layout design work, high density and high utilization rate

Pending Publication Date: 2022-06-03
MAXIO TECH HANGZHOU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But for the capacitance array of a large number of capacitors, the volume of its capacitance array is huge, so for such as figure 1 The MOM capacitor shown needs further improvement to further reduce the size of the capacitor

Method used

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Embodiment Construction

[0039] The present invention will be described in more detail below with reference to the accompanying drawings. In the various figures, like elements are designated by like reference numerals. For the sake of clarity, various parts in the figures have not been drawn to scale. Additionally, some well-known parts may not be shown.

[0040] The invention may be embodied in various forms, some examples of which will be described below.

[0041] figure 2 A schematic three-dimensional structure diagram of the MOM capacitor 200 according to the first embodiment of the present invention is shown; such as figure 2 As shown, the MOM capacitor 200 includes a substrate 201, a multi-layer conductive layer 202 on the substrate 201, and an insulating layer filled between the conductive layers 202 and the electrode strips of the same conductive layer 202 (Fig. not shown). The conductive layer 202 includes a first conductive layer 21 , a second conductive layer 22 and a third conductiv...

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PUM

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Abstract

Disclosed is an MOM capacitor, comprising: a substrate; the first conductive layer is located on the substrate and is a conductive polar plate; the second conducting layer is located on the first conducting layer and comprises a plurality of first electrode strips and second electrode strips which are separated from each other; the third conductive layer is located on the second conductive layer and is a conductive polar plate; the plurality of through holes are used for electrically connecting the first electrode strips to the first conductive layer and the third conductive layer to form a first electrode, the plurality of second electrode strips are electrically connected to form a second electrode, and the polarity of the second electrode is opposite to that of the first electrode; the first electrode strips and the second electrode strips are alternately arranged in a surrounding mode on the plane where the second conductive layer is located. One of the plurality of second electrode strips is located at the center of the plane where the second conductive layer is located, and one of the plurality of first electrode strips is located at the edge of the plane where the second conductive layer is located.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a MOM capacitor. Background technique [0002] In the field of capacitor array structure, capacitor is a very important basic element. Metal-Oxide-Metal (MOM) capacitors and Metal-Insulator-Metal (MIM) capacitors are two common capacitor structures. MIM capacitors use metal patterns on the same layer or on different layers to form the same electrode, and the capacitance value is mainly composed of capacitors formed by different conductor layers. The MOM capacitor adopts the metal pattern of the same layer to form two electrodes with opposite polarities at the same time, so its capacitance value can include the capacitance formed by the same conductor layer. [0003] refer to figure 1 As shown, the MOM capacitor 100 includes a substrate 101 and a conductor layer M1. The conductor layer M1 includes two comb-shaped first electrodes 102 and second electrodes 103. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L49/02H10N97/00
CPCH01L23/642H01L28/60
Inventor 吴亚芬孙伟吉黄怡仁姚静王贺辉俞涛
Owner MAXIO TECH HANGZHOU LTD
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