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High electron mobility transistor device

A high electron mobility, transistor technology, applied in electric solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve problems such as power loss, switching loss, and efficiency reduction

Pending Publication Date: 2022-06-03
VISHAY SILICONIX LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although GaN-based devices typically do not have a pn junction and typically have fast reverse recovery compared to traditional silicon-based power transistors, when operating a GaN HEMT in reverse mode (when the drain-source voltage Vds goes negative) , there are still significant switching losses
Depending on the reverse peak current, the reverse conduction mode voltage can be much higher than 2 volts, for example to 4 volts or more, resulting in power loss and reduced efficiency

Method used

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Embodiment Construction

[0020] In the following detailed description of the present invention, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, one skilled in the art will realize that the present invention may be practiced without these specific details or with their equivalents. In other instances, well-known methods, procedures, components and circuits have not been described in detail so as not to unnecessarily obscure aspects of the present invention.

[0021] Some portions of the following detailed description are presented in terms of procedures, logic blocks, processes, and other symbolic representations of operations for fabricating a semiconductor device. These descriptions and representations are the means used by those skilled in the art of semiconductor device fabrication to most effectively convey the nature of their work to others skilled in the art. In this application, a procedure, logic block, process, etc. is c...

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Abstract

The invention discloses a high electron mobility transistor device. A device includes a first high electron mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and the drain. The second HEMT has a lower threshold voltage than the first HEMT.

Description

[0001] Divisional Application Information [0002] The patent application of the present invention is a divisional application of the invention patent application whose application date is December 4, 2017, the application number is 201711261540.5, and the invention name is "high electron mobility transistor device". [0003] Relevant U.S. Application [0004] This application claims the title "Psuedo-Schottky Structure in GaN and Method of Manufacturing" filed on December 2, 2016 by A. Shibib et al., Serial No. 62 Priority of US Provisional Application / 429,627, which is hereby incorporated by reference in its entirety. Background technique [0005] A High Electron Mobility Transistor (HEMT) is a Field Effect Transistor (FET) that incorporates a junction between two materials with different band gaps as a channel rather than a doped region, as is the case for a Metal Oxide Semiconductor FET (MOSFET) Typical situation. HEMTs are characterized by low on-resistance, high b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/78H01L29/861H01L21/335H01L21/8252H01L29/205H01L29/423H01L29/10H01L29/20H01L29/207
CPCH01L29/66462H01L29/7786H01L29/7788H01L29/778H01L29/7831H01L29/861H01L21/8252H01L29/205H01L29/4238H01L29/66431H01L29/42316H01L29/2003H01L29/1066H01L29/207H01L29/42364H01L27/085H01L27/0605
Inventor 艾曼·谢比卜凯尔·特里尔
Owner VISHAY SILICONIX LLC