Preparation method of epitaxial wafer with Bragg reflector
A technology of Bragg reflectors and epitaxial wafers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems that affect the reflective performance of Bragg reflectors, lattice mismatch, and the roughness quality of Bragg reflectors is not good enough, so as to improve Microscopic crystal quality and interlayer quality, reasonable roughness, and the effect of improving light extraction efficiency
Pending Publication Date: 2022-06-03
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0004] Since the Bragg reflector itself is grown alternately by the refractive layers of different materials, there are certain lattice mismatches and defects inside, and the combined Bragg reflector is usually grown on a material different from the Bragg reflector itself, which is prone to Bragg reflection The roughness and quality of the mirror are not good enough, which affects the reflective performance of the Bragg reflector
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[0034] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.
[0035] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and similar terms used in the description and claims of this disclosed patent application do not denote any order, quantity, or importance, but are merely used to distinguish the various components . Likewise, "a" or "an" and the like do not denote a quantitative limitation, but rather denote the presence of at least one. Words like "including" or "comprising" mean that the elements or items listed before "including" or "including" cover the elements or items listed after "including" or "including" and their equiva...
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Abstract
The invention provides a preparation method of an epitaxial wafer with a Bragg reflector, and belongs to the technical field of light emitting diodes. After the n-type layer, the active layer and the p-type layer are grown on the substrate, a plurality of SiO2 refraction layers and Ti3O5 refraction layers are alternately evaporated to obtain the Bragg reflector. The evaporation rate of the SiO2 refraction layer is the first evaporation rate so that the SiO2 refraction layer with the surface roughness of 0.5-0.8 nm can be obtained, and the evaporation rate of the Ti3O5 refraction layer is the second evaporation rate so that the Ti3O5 refraction layer with the surface roughness of 1.0-1.1 nm can be obtained; the SiO2 refracting layer and the Ti3O5 refracting layer have the advantages that the SiO2 refracting layer and the Ti3O5 refracting layer are uniformly distributed, the roughness is reasonable, particulate matters appearing at the junction of the SiO2 refracting layer and the Ti3O5 refracting layer can be reduced, the junction of the SiO2 refracting layer and the Ti3O5 refracting layer is The microcrystal quality and interlayer quality of the obtained Bragg reflector are effectively improved, so that the reflection efficiency of the Bragg reflector is improved.
Description
technical field [0001] The present disclosure relates to the technical field of light-emitting diodes, and in particular, to a method for preparing an epitaxial wafer with a Bragg reflector. Background technique [0002] A light-emitting diode is a semiconductor electronic component that emits light. As a high-efficiency, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. Improving the luminous efficiency of chips is the goal that light-emitting diodes continue to pursue. [0003] A light-emitting diode epitaxial wafer is a basic structure for preparing a light-emitting diode. A common light-emitting diode epitaxial wafer includes a substrate and an n-type layer, an active layer, a p-type layer, and a Bragg mirror stacked on the substrate in sequence. The added Bragg reflector can reflect most of the light, i...
Claims
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Login to View More IPC IPC(8): H01L33/46H01L33/60H01L33/00
CPCH01L33/46H01L33/60H01L33/005
Inventor 严帆汤淼冬旻弘
Owner HC SEMITEK ZHEJIANG CO LTD