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Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material

A technology of cubic boron nitride and single crystal materials, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor thermal conductivity and low breakdown voltage

Pending Publication Date: 2022-06-10
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, traditional silicon-based diodes are limited by their physical characteristics such as poor thermal conductivity and low breakdown voltage, which have been difficult to meet the needs of higher power electronic devices.

Method used

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  • Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material

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Abstract

The invention discloses a Schottky-PN junction diode based on a cubic boron nitride (c-BN) single crystal material. The Schottky-PN junction diode comprises a c-BN crystal, an ITO thin film and an Au electrode. Wherein the two sides of the c-BN crystal are plated with an ITO thin film and an Au electrode respectively, and then Au and In are welded to serve as an external wire. The ideal factor of the Au / c-BN / ITO Schottky-PN junction diode is 25.15, and the starting voltage is 5V. A thought is provided for preparation and analysis of an electronic device based on the c-BN single crystal.

Description

A Schottky-PN junction diode based on cubic boron nitride (c-BN) single crystal material technical field The invention belongs to the technical field of electronic device, be specifically related to a kind of based on cubic boron nitride (c-BN) single crystal material material Schottky-PN junction diodes. Background technique [0002] Schottky diodes have smaller turn-on voltages and smaller reverse breakdown voltages, while for PN junction diodes, However, it has a higher turn-on voltage and a larger breakdown voltage. To combine their properties, in 2009 Makino proposed Schottky‑PN Junction Diode (SPND). At present, traditional silicon-based diodes are limited by their poor thermal conductivity, low breakdown voltage, etc. Physical characteristics, it has been difficult to meet the requirements of higher power electronic devices. People gradually turn their attention to high thermal conductivity, high impact Wide-bandgap semiconductor materials with penetration ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/20H01L29/47H01L29/861
CPCH01L29/2003H01L29/47H01L29/861
Inventor 郑伟林卓耿朱思琪
Owner SUN YAT SEN UNIV