Simulation method, system, storage medium and device for gate-level circuit

A gate-level circuit and simulation method technology, applied in CAD circuit design, geometric CAD, special data processing applications, etc., can solve the problems of increasing simulation time and complexity, reducing simulation efficiency, etc.

Active Publication Date: 2022-08-09
NANCHANG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of simulating signal propagation, the existing simulators can only propagate the transition events of logic gates one by one.
This means that if the simulation process experiences several transient states, it needs to go through several simulation propagations, and since there are more than a dozen basic logic gate types in the gate-level circuit, each simulation propagation requires a lot of judgment work, especially for For large-scale gate-level circuit simulation, the time and complexity of simulation will be greatly increased, and the efficiency of simulation will be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Simulation method, system, storage medium and device for gate-level circuit
  • Simulation method, system, storage medium and device for gate-level circuit
  • Simulation method, system, storage medium and device for gate-level circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] see figure 1 , the first embodiment of the present invention provides a method for simulating a gate-level circuit, including steps S101 to S103.

[0048] S101, read the translated directed graph file to obtain the simulation logic of each node in the directed graph and the topology structure of the gate-level circuit.

[0049] It should be noted that for the gate-level circuit topology: the translated directed graph file can already represent the circuit as a directed graph, each graph node represents a gate, and each gate has a unique ID attribute to use It is used to find its position in the directed graph, so to obtain the topology of the gate-level circuit, it is only necessary to read the directed graph represented by the translation file.

[0050] Specifically, the step of reading the translated directed graph file to obtain the simulation logic of each node in the directed graph and the topology of the gate-level circuit specifically includes:

[0051] Read th...

Embodiment 2

[0094] like figure 2 As shown, this embodiment is a method for translating a gate-level circuit, which is used to translate the gate-level netlist file to obtain the directed graph file in the first embodiment, including steps S201-S205.

[0095] S201, generating a VVP file according to a target gate-level netlist file and a process library file, where the target gate-level netlist is a text file used to describe the gate-level semantics of connection relationships between circuit devices, and the process library file contains The logic elements that compose each circuit device are described, and the VVP file is a text file used to describe the gate-level semantics of the connection relationship between the logic elements of each node.

[0096] It should be noted that the VVP file in the embodiment of the present invention may be generated by the Icarus Verilog simulator, and the Icarus Verilog simulator will generate an intermediate file VVP file when simulating the circuit ...

Embodiment 3

[0159] Please refer to image 3 , this embodiment provides a gate-level circuit simulation system, including:

[0160] Reading module: used to read the translated directed graph file to obtain the simulation logic of each node in the directed graph and the topology of the gate-level circuit.

[0161] The reading module is also used for:

[0162] Reading the translated directed graph file, the directed graph file includes a first directed graph file and a second directed graph file;

[0163] Build a first preset global dictionary, traverse the first directed graph file to extract the simulation logic of the combinational logic udp node and the sequential logic udp node and store it in the first preset global dictionary, where the first preset The global dictionary can be the global dictionary GUDPDefMap;

[0164] A second preset global dictionary is created, and the second directed graph file is traversed to analyze and obtain the topological structure of the gate-level circ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a gate-level circuit simulation method, system, storage medium and device. The method includes: reading a translated directed graph file; inputting an ID of an initial node and assigning a value to the initial node, according to the initial The ID of the node is queried in the directed graph file to find the initial node and assign the value to the input port of the initial node to simulate the input excitation signal to the initial node; take the initial node as the simulation starting point in sequence Perform simulation solution and recursive propagation on each node of the directed graph. If the simulation solution result of any node of the directed graph changes and the node is a multi-input node, the node is transferred to the global simulation queue to wait in sequence. The simulation solution is performed and the simulation solution result is transmitted to the next node after the simulation solution is obtained until the final simulation result is obtained.

Description

technical field [0001] The invention relates to the field of circuit simulation, in particular to a simulation method, system, storage medium and device of a gate-level circuit. Background technique [0002] In the high-end digital IC industry, large-scale gate-level circuit simulation is a key technology. However, in the process of simulating signal propagation, the existing simulator can only propagate the transition events of the logic gates one by one. This means that if the simulation process experiences several transients, it needs to go through several simulation propagations, and since there are more than a dozen basic logic gate types in gate-level circuits, each simulation propagation needs to perform a lot of judgment work, especially for For large-scale gate-level circuit simulation, the simulation time and complexity will be greatly increased, and the simulation efficiency will be reduced. SUMMARY OF THE INVENTION [0003] The purpose of the present inventio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/33G06F30/18
CPCG06F30/33G06F30/18
Inventor 王玉皞彭鑫汤湘波刘智毅曹进清杨越涛熊尉钧魏佳妤
Owner NANCHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products