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Method of manufacturing semiconductor device and corresponding semiconductor device

A semiconductor and equipment technology, applied in the field of semiconductor equipment, can solve problems such as increased migration risks, achieve the effects of reducing costs, simplifying design and process, and eliminating pre-plating on the bottom side

Pending Publication Date: 2022-06-21
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] By increasing the impact of contact pitch on contact width (fewer I / O pins available), increasing solder joint cross section, solderable area, may increase risk of migration, while also causing creepage issues

Method used

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  • Method of manufacturing semiconductor device and corresponding semiconductor device
  • Method of manufacturing semiconductor device and corresponding semiconductor device
  • Method of manufacturing semiconductor device and corresponding semiconductor device

Examples

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Embodiment Construction

[0025] In the ensuing description, various specific details are set forth in order to provide an in-depth understanding of various examples according to the described embodiments. The embodiments may be obtained without one or more of the specific details, or using other methods, components, materials, etc. In other instances, well-known structures, materials, or operations have not been shown or described in detail so as not to obscure aspects of the embodiments.

[0026] References to "an embodiment" or "one embodiment" within the framework of this description are intended to indicate that a particular configuration, structure, or feature described with respect to that embodiment is included in at least one embodiment. Thus, phrases such as "in an embodiment," "in one embodiment," and the like, which may appear at various points in this description are not necessarily referring to the same embodiment. Furthermore, the particular conformations, structures or features may be ...

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Abstract

The embodiment of the invention relates to a method of manufacturing a semiconductor device and a corresponding semiconductor device. A semiconductor chip is mounted at a first surface of the lead frame, and an insulating encapsulation is formed on the lead frame. An etch mask is applied at the second surface of the lead frame to cover locations of two adjacent rows of electrical contacts and connecting rods between the two adjacent rows that electrically couple the electrical contacts. The second surface is then etched through the etch mask so as to remove the leadframe material at the second surface and define electrical contacts and connecting rods. The electrical contact includes a distal surface and a side that is encapsulated by an insulative encapsulation leaving uncovered. The etch mask is then removed, and the electrical contacts and connecting rods are used as electrodes in electroplating of the distal surfaces and sides of the electrical contacts. The connecting rods are then removed from between two adjacent rows during device separation.

Description

[0001] priority claim [0002] This patent application claims the benefit of priority from Italian Application No. 102020000031541 filed on December 18, 2020, the contents of which are hereby incorporated by reference in their entirety to the fullest extent permitted by law. technical field [0003] This description relates to semiconductor devices. [0004] One or more embodiments may be applied to semiconductor devices such as, for example, integrated circuits (ICs). Background technique [0005] Quad Flat No-Lead (QFN) packages with peripheral pads on the bottom of the package to provide electrical connection to a substrate such as a printed circuit board (PCB) are examples of semiconductor devices that may include contacts pre-plated only on the bottom side thereof point (eg, known in the art as a pre-plated frame (PPF)). [0006] Oxidized metal (eg, copper) at the sides of the contacts hinders the solderability of the contacts. Additionally, PPF contact metallizatio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/50H01L21/56H01L21/60H01L23/495H01L23/31
CPCH01L21/50H01L21/56H01L24/85H01L23/49582H01L23/49541H01L23/49548H01L23/3107
Inventor F·V·丰塔纳M·德赖
Owner STMICROELECTRONICS SRL