GaN-based HEMT device and preparation method and application thereof
A device and area technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complex process and large ohmic contact resistance, and achieve the effect of simple process
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Embodiment 1
[0059] This embodiment provides a preparation method of a GaN-based HEMT device, such as figure 1 shown, including the following steps:
[0060] S1. Provide a Si substrate, sequentially form a GaN buffer layer 101, a GaN channel layer 102, an AlGaN barrier layer 103, and a GaN cap layer 104 on the Si substrate, and grow 30 nm SiN on the surface of the GaN cap layer 104 x Amorphous thin layer to control the channeling effect of ion implantation and act as an energy absorber to reduce ion implantation induced damage (see figure 1 (1));
[0061] S2. Implant Si ions in the regions corresponding to the source and drain regions of the amorphous thin layer and the source and drain regions of the device;
[0062] Specifically, AZ5214 positive adhesive is used to obtain the source and drain region windows through a photolithography process, Si ions are implanted in the source and drain regions by an ion implanter, and high-energy Si ions are implanted into the epitaxial layer through...
Embodiment 2
[0077] This embodiment provides a preparation method of a GaN-based HEMT device, such as figure 1 shown, including the following steps:
[0078] S1. Provide a Si substrate, sequentially form a GaN buffer layer 101, a GaN channel layer 102, an InAlGaN barrier layer 103, and a GaN cap layer 104 on the Si substrate, and grow 30 nm SiN on the surface of the GaN cap layer 104 x Amorphous thin layer to control the channeling effect of ion implantation and act as an energy absorber to reduce ion implantation induced damage (see figure 1 (1));
[0079] S2. Implant Si ions in the regions corresponding to the source and drain regions of the amorphous thin layer and the source and drain regions of the device;
[0080] Specifically, AZ5214 positive adhesive is used to obtain the source and drain region windows through a photolithography process, and an ion implanter is used to implant Si ions in the source and drain regions, and high-energy Si ions pass through SiN x Amorphous thin lay...
Embodiment 3
[0095] This embodiment provides a preparation method of a GaN-based HEMT device, such as figure 2 shown, including the following steps:
[0096] S1. Provide a Si substrate, sequentially form a GaN buffer layer 101, a GaN channel layer 102, an AlGaN barrier layer 103, and a GaN cap layer 104 on the Si substrate, and grow 30 nm SiN on the surface of the GaN cap layer 104 x Amorphous thin layer to control the channeling effect of ion implantation and act as an energy absorber to reduce ion implantation induced damage (see figure 2 (1));
[0097] S2. Implant Si ions in the regions corresponding to the source and drain regions of the amorphous thin layer and the source and drain regions of the device;
[0098] Specifically, AZ5214 positive adhesive is used to obtain the source and drain region windows through a photolithography process, Si ions are implanted in the source and drain regions by an ion implanter, and high-energy Si ions are implanted into the epitaxial layer throu...
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Abstract
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