MOS type Schottky diode structure
An N-type, cathode technology, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced withstand voltage and increased high temperature leakage current, to improve withstand voltage and switching speed, reduce high temperature leakage current and conduction. Pressure drop, effect of increasing width
Pending Publication Date: 2022-07-01
BYD SEMICON CO LTD
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0004] In view of the above problems, the purpose of the embodiments of the present invention is to provide a MOS Schottky diode structure to solve the problem of lowering the conduction voltage drop of the MOS Schottky diode in the prior art, resulting in reduced withstand voltage and high temperature leakage current. growing problem
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0017] In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.
[0018] refer to figure 1 , which shows a schematic structural diagram of a MOS-type Schottky diode structure embodiment of the present invention, which may specifically include: an N-type substrate layer 01 disposed on the metal layer 07 on the backside of the cathode; N-type epitaxial layer 03; since the carrier concentration of the N-type substrate layer 01 is higher than that of the N-type epitaxial layer 03, N+ can be used to represent the N-type substrate layer 01, and N- is used to represent the N-type epitaxial layer 03; A plurality of MOS regions 031 embedded in the upper surface of the N-type epitaxial layer 03; the plurality of MOS regions 031 are distributed along a first direction, and the first direction is a direct...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides an MOS (Metal Oxide Semiconductor) type Schottky diode structure. The MOS type Schottky diode structure comprises an N type substrate layer arranged on a cathode back metal layer; the N-type epitaxial layer is positioned on the N-type substrate layer; a plurality of MOS regions embedded in the upper surface of the N-type epitaxial layer; the plurality of MOS regions are distributed along a first direction; the metal anode contact layer covers the N-type epitaxial layer and the plurality of MOS regions; the first width of the top of the MOS region in the first direction is smaller than the second width of the bottom of the MOS region in the first direction, and the top of the MOS region is close to the metal anode contact layer. According to the MOS type Schottky diode, the bottom width of the MOS region can be increased while the width of the Schottky region is increased, the high-temperature leakage current and the conduction voltage drop are reduced, the withstand voltage and the switching speed of the MOS type Schottky diode are improved, and when reverse voltage is applied to the MOS type Schottky diode, depletion layers generated by all the MOS regions can still be connected.
Description
technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a MOS type Schottky diode structure. Background technique [0002] When the structure of the MOS Schottky diode in the prior art needs to reduce the conduction voltage drop of the MOS Schottky diode, the technique used is to increase the width of the Schottky region of the MOS Schottky diode. [0003] The method of reducing the turn-on voltage drop of the MOS-type Schottky diode in the prior art also has the following defects: after the width of the Schottky region is increased, the width of the MOS region will also be narrowed, and the width of the MOS region will be narrowed. The problems that the withstand voltage of the MOS-type Schottky diode and the high temperature leakage current increase are caused. SUMMARY OF THE INVENTION [0004] In view of the above problems, the purpose of the embodiments of the present invention is to provide a MOS Schottky diode ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/8725H01L29/0619
Inventor 王艳春
Owner BYD SEMICON CO LTD