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Photoelectric conversion apparatus and image reading apparatus

A photoelectric conversion and device technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of easy deterioration of FPN and improper crosstalk characteristics of components, and achieve the effect of reducing crosstalk

Inactive Publication Date: 2004-04-21
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, in a substrate formed with a plurality of photosensitive elements, in order to collect horizontally diffused holes (as described in the above-mentioned general example), the separation of the elements is affected by semiconductor regions of the same conductivity type as the substrate, The problem to be solved is the inappropriate crosstalk characteristics between components
[0013] Another problem is that the injected carriers from the external circuit system to the substrate become spurious signals and the FPN (Fixed Pattern Noise) characteristics are easily degraded

Method used

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  • Photoelectric conversion apparatus and image reading apparatus
  • Photoelectric conversion apparatus and image reading apparatus
  • Photoelectric conversion apparatus and image reading apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example 〕

[0045] The structure of the photoelectric conversion device according to the first embodiment of the present invention and Figure 1A and 1B Same as shown.

[0046] In this example, the impurity concentration and junction depth of the substrate and each region are determined as shown in the figure: the impurity concentration of the substrate 100 is 1×10 15 / cm 3 ; The impurity concentration of the first semiconductor region 101 is 1×10 20 , the junction depth is 0.3 μm; the impurity concentration of the second semiconductor region 102 is 5×10 18 / cm 3 , the junction depth is 7 μm; the impurity concentration of the third semiconductor region 103 is 5×10 16 / cm 3 , with a junction depth of 4 μm.

[0047] A LOCOS region is formed as a thick insulating region on each pixel separation region by selective oxidation, and a layer of light-shielding material is grown on it.

[0048] Figure 1B It is a schematic plan view of a photoelectric conversion device including multiple ...

no. 2 example

[0052] figure 2 is a schematic sectional view showing the structure of the second embodiment of the present invention.

[0053] In this figure, the reference numeral 100 refers to n - type semiconductor substrate, 101 refers to p + type of the first semiconductor region, 102 refers to p + The n-type second semiconductor region, 103 refers to the n-type third semiconductor region.

[0054] This embodiment is characterized in that a high lattice defect region is formed on the substrate 100 by IG (intrinsic gettering). Such micro-defects or strains inside the substrate have the function of trapping or fixing impurities that adversely affect device characteristics, or removing point defects related to defect generation. Due to this function, the element formation region on the surface of the substrate is cleaned and does not generate defects when elements are formed, thereby improving element characteristics and yield. In addition, this function combined with the structure o...

no. 3 example

[0056] image 3 is a schematic sectional view showing the structure of the third embodiment of the present invention.

[0057] In this figure, the reference numeral 100 refers to p - type semiconductor substrate, 101 refers to n + type of the first semiconductor region, 102 refers to n + The second semiconductor region of p-type, 103 refers to the third semiconductor region of p-type.

[0058] The impurity concentration and junction depth of the substrate and each region are determined as shown in the figure.

[0059] This embodiment is characterized in that an impurity region 104 is formed in a part of the semiconductor substrate exposed from the thick insulating film between the third semiconductor region and the first semiconductor region (although the exposed part is actually covered with an insulating film), With its impurity concentration (at 1×10 16 and 1×10 18 Both (inclusive)) and its conductivity type is the same as that of the substrate.

[0060] In the case ...

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Abstract

Disclosed is a photoelectric conversion apparatus, including a first conduction type semiconductor substrate; a plurality of first semiconductor areas formed on a surface of the semiconductor substrate, with the conduction type different from that of the substrate; second semiconductor areas arranged among the first semiconductor areas, with the conduction type the same as that of the first semiconductor areas; and third semiconductor areas arranged between the first semiconductor areas and the second semiconductor areas, belonging to the first-conduction type, with the impurity concentration higher than that of the semiconductor substrate. As a pixel separation zone whose conduction type is opposite to that of the substrate is formed as traps of carriers between the pixels, the useless carriers are seized so as to reduce crosstalk.

Description

technical field [0001] The present invention relates to one-dimensional or two-dimensional photoelectric conversion devices and image reading devices used in facsimile machines, digital copiers, X-ray cameras or the like, and particularly to the element separation structure thereof. Background technique [0002] Hitherto, a reading system using a thumbnail optical device and a CCD-type sensor has been used as a reading system in a facsimile machine, a digital copier, an X-ray camera, or the like, but as photoelectric conversion semiconductor materials represented by hydrogenated amorphous silicon (hereinafter referred to as a-Si), the recent development of a so-called contact type sensor in which the photoelectric conversion element and signal processing part are formed in a large-area substrate, and it is arranged to pass through a magnification factor of 1 optical system to read the information on the information source. [0003] Figures 7A-7C is a sectional view showing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/14H01L21/322H01L21/76H01L27/146H01L31/10
CPCH01L27/14678H01L27/14623
Inventor 小开须川成利
Owner CANON KK