Through hole filling electroplating method and electroplating device
An electroplating device and electroplating tank technology, which is applied to electrodes, electrolytic components, electrolytic processes, etc., can solve the problems of inability to meet the requirements of through-hole metallization, the technical complexity of the seed layer, and the increase in cost.
Pending Publication Date: 2022-07-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF8 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
As the thickness-to-diameter ratio of TGV in advanced three-dimensional packaging technology continues to increase, the complexity and cost of existing seed layer technology continue to increase, which can no longer meet the current metallization needs of through holes. Through-hole copper plating device that does not need to make a conductive seed layer in the through-hole while maintaining the convection performance of the plating solution
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
specific Embodiment approach 2
[0035] Considering that the electroplating device installed horizontally and vertically installed have great changes, the patent of the present invention provides Example 2 to explain the specific implementation process of the electroplating device installed horizontally.
[0036] refer to image 3 , taking TGV electroplating as an example, the laterally mounted electroplating device can be applied in the field of electroplating for depositing copper from bottom to top in the through-glass hole by arranging the nozzle array 202 and installing the conductive backplane 209 for the plating member 210 , so as to have a hole-filling effect.
[0037] Before electroplating begins, the metal anode 201 should be placed in image 3 The position shown is not connected to an external power source. It should be noted that, unlike a vertically mounted electroplating device, the electroplating solution should not be poured into the plating solution chamber 212 at this time.
[0038] Before...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a through hole filling electroplating method and an electroplating device, belongs to the technical field of electronic circuit electroplating, and relates to the fields of glass through hole (TGV) interconnection technology, ceramic through hole and circuit board manufacturing and the like. According to the through hole filling electroplating method and the electroplating device, a seed layer does not need to be manufactured in a through hole, and meanwhile the through hole filling copper plating technology on a glass or ceramic or resin matrix is achieved through the electroplating device designed by the invention. It needs to be pointed out that current through hole filling generally adopts a double-electrolytic-bath electroplating procedure, a butterfly wing is formed in the middle of a through hole through pulse electroplating, then a direct-current power source is adopted for blind hole copper filling treatment, and the process is carried out in different electroplating bath solutions and different electroplating baths, so that the process cost and complexity are greatly increased. According to the electroplating procedure, the two procedures of manufacturing butterfly wings through pulse electroplating and filling blind holes through direct current are avoided, seed layers do not need to be manufactured in the through holes, the procedures are few, cost is saved, and efficiency is improved.
Description
technical field [0001] The invention belongs to the technical field of electronic circuit electroplating, relates to glass through hole (TGV) interconnection technology, ceramic through hole and circuit board through hole interconnection technology, in particular to a through hole filling electroplating method and an electroplating device. Background technique [0002] In recent years, with the booming of emerging fields of 5G, artificial intelligence, smart phones, automotive electronics, wearable devices, and industrial control security, advanced three-dimensional packaging technology has provided an important technical means for realizing the miniaturization, light weight and multi-functionality of electronic products. . When the TSV semiconductor material transmits signals, the signal has a strong electromagnetic coupling effect with the substrate material, and an eddy current phenomenon will occur in the substrate, causing signal insertion loss, crosstalk, etc. to affec...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C25D5/54C25D5/56C25D17/00C25D17/12C25D21/12C25D21/14
CPCC25D5/54C25D5/56C25D17/00C25D21/14C25D17/12C25D21/12
Inventor 陶志华龙致远林泽伟
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA